SI6924AEDQ-T1-GE3

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The SI6924AEDQ-T1-GE3 is an integrated N-channel low-side vertical FET array designed for the automotive and industrial motor control or gate drive applications. This dual NMOS register enhances the performance of systems operating in the temperature range of -55°C to 150°C, offering a wide operating voltage of 8 to 24 volts.

In this application field, the SI6924AEDQ-T1-GE3 features a maximum current rating of 4.5A, a RDS(on) of 6mΩ, a gate capacitance of 5nF, and a maximum gate-source voltage of +-20V, enabling fast switching times. It also features low output voltage gate drivers and an integrated RC snubber to minimize turn-on dV/dt and turn-off dI/dt, creating robust, noise-immunity systems when used in high voltage, high temperature motor control environments.

The SI6924AEDQ-T1-GE3 also features an integrated durability protection circuit that protects against the breakdown of the output stage MOSFETs. This protection circuit ensures correct operation of the device in the event of an output voltage spike or a prolonged overload, providing safe and reliable operation.

The working principle of the SI6924AEDQ-T1-GE3 is based on the vertical N-channel MOSFETs. The array consists of two N-channel vertical MOSFETs in a common source configuration and connected in parallel, with the gates of both MOSFETs connected to the same drive input signal. When the drive input signal is applied, the gate voltage of each MOSFET is individually adjusted with the on-chip circuit, allowing the device to accurately control switching time and avoid premature triggering of the other MOSFET.

When the array is enabled, the current grows through the MOSFETs until it transcends the maximum current rating. The integrated protection circuit then turns off both MOSFETs, eliminating the risk of danger due to an inadvertent overload. This protection circuit also limits the voltage across the MOSFETs, protecting the device from an excessive surge or overvoltage.

In summary, the SI6924AEDQ-T1-GE3 is an ideal choice for driving low-side vertical FETs in a wide range of temperature and voltage conditions, and is an excellent choice for automotive and industrial motor control applications. By applying its advanced thermal protection, the SI6924AEDQ-T1-GE3 can handle continuous high current, high speed, and high temperature operation, ensuring reliable and safe performance.

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