SI6967DQ-T1-GE3

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The SI6967DQ-T1-GE3 is a low-voltage array power MOSFETs (metal oxide semiconductor field-effect transistors) from Infineon Technologies with an application field ranging from low-voltage, high-power switching to low-density power distribution. The device consists of an array of four depletion-mode MOSFETs with independently integrated gate drivers and temperature protection.

In terms of working principle, when the gate of the MOSFET is uncharged, i.e. when there is no applied voltage, the transistor is turned off and the current from the drain to the source is blocked. When the voltage applied to the gate is increased, the transistor is turned on and the current between the drain and the source is allowed to flow. This bidirectional current can be used to power a wide variety of applications.

The main feature of the device is its low on-resistance, which makes it ideal for power applications such as motor control and regulation, DC-DC (direct current-direct current) converters, and fast switching power supplies. This power MOSFETs is characterized by a high linearity, high efficiency, and low noise operation, allowing for efficient power management in high power-density applications. The device boasts a maximum resistance of 1.3 ohms, which is more than twice the resistance of the standard MOSFET.

The device has a wide range of applications. It can be used in high-speed switching applications, such as the aforementioned motor control and regulation, DC-DC converter and power supply. In addition, it can be used for high-power analog applications, such as distributed power supply systems and telecommunications power distribution. It can also be used in automotive applications, focusing on engine control, powertrain control, and vehicle exhaust control.

The device also has special features that make it suitable for use in harsh environments. It is designed to withstand temperatures of up to 175°C and is rated for operation up to 100V. It also has built-in protection against overvoltage, over-temperature, and over-current. The device can also be configured to operate in different frequency ranges, depending on the application. Finally, the device is RoHS compliant, which means that it does not contain any hazardous materials.

In conclusion, the SI6967DQ-T1-GE3 is a low-voltage array power MOSFETs from Infineon Technologies with a wide range of possible applications, ranging from low-voltage, high-power switching to low-density power distribution. It has a low on-resistance, allowing for efficient power management in high power-density applications. The device has special features that make it suitable for use in harsh environments, such as temperature range of -55° to 175°C, and a wide range of possible operating frequencies. The device also has built-in protection against overvoltage, over-temperature and over-current, and is compliant with the RoHS directive.

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