SI6969DQ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI6969DQ-T1-GE3-ND

Manufacturer Part#:

SI6969DQ-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 12V 8TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 1.1W Surface ...
DataSheet: SI6969DQ-T1-GE3 datasheetSI6969DQ-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Base Part Number: SI6969
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI6969DQ-T1-GE3 is a field effect transistor (FET) array device consisting of two N-channel FETs with integrated logic level gate drive and logic level threshold protection. It is a product manufactured by the Vishay Semiconductor company. The device is intended for use in a number of applications such as automated test equipment, medical imaging, military/ aerospace and consumer electronics.

A field effect transistor (FET) is a three-terminal semiconductor device which is composed of a source and a drain terminal to which a voltage is applied and a gate terminal which provides the voltage control. The SI6969DQ-T1-GE3 device is made up of two internally connected N-channel FETs with integrated logic level gate drive and logic level threshold protection. It is a Dual N-Channel FET array device based on the standard TO-252, DPAK packaging. This device has a low on-state resistance and is capable of switching up to 4A of current.

The SI6969DQ-T1-GE3 offered by Vishay Semiconductor has a wide variety of features including low on-state resistance, low operating temperature, fast switching times and an optimized gate drive for a wide range of applications. It also has an on-board protection circuit which protects it from any over current or over voltage conditions.

The device is designed to provide a digital switch that is ideal for high current applications. It can be used to quickly switch between high and low current levels without having to go through the slow turn-on and turn-off time of a conventional MOSFET. It also has an optimized gate drive which minimizes switching losses associated with high current transistors.

The SI6969DQ-T1-GE3 has several applications where it can be used. Firstly, it can be used in large power switching applications such as motor speed control, lighting control and energy efficient appliances. Secondly, it can be used in power system control, precision timing, and charging. Thirdly, it can be used for source and sink current applications in automotive systems, power supplies and battery chargers. Finally, it can be used in logic level switching for various industrial and consumer electronics.

The SI6969DQ-T1-GE3 FET array device is a very useful device for switching high current applications while maintaining the efficiency and reliability of the underlying power system. It is easy to use and offers protection from over current and over voltage conditions. In addition, it is able to switch quickly and accurately making it an ideal device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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