SI6975DQ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI6975DQ-T1-GE3-ND

Manufacturer Part#:

SI6975DQ-T1-GE3

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 4.3A 830mW Sur...
DataSheet: SI6975DQ-T1-GE3 datasheetSI6975DQ-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.53794
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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The SI6975DQ-T1-GE3 is a MOSFET array offered by Vishay Siliconix. It is commonly used in a variety of applications such as audio, automotive, lighting, medical, power, and telecommunications. The array consists of three Si6975DQ power MOSFETs in a monolithic package, each featuring an N-channel enhancement mode MOSFET with low resistance and a maximum voltage handling capability of 60V. The array is designed to provide automatic switching between two outputs. The arrangement of the three MOSFETs allows for high-frequency applications, such as switch-mode power supplies and motor drives, in which high-speed switching is required. Each device is connected in series between a positive voltage source and ground. The gates are connected to a control signal, typically a logic signal. When the logic signal is low, the source is turned on and current is allowed to pass through the source-drain section of the MOSFETs. When the logic signal is high, the MOSFETs are turned off, preventing current flow and protecting the device.

Unlike a BJT, the SI6975DQ-T1-GE3 uses a source-gate voltage to turn on the device rather than an increase in the base current. This voltage is applied to the gate which creates an electric field between the source and drain of the MOSFET. This electric field attracts mobile electrons, allowing them to flow from the source to the drain and creating a low-resistance conducting channel. The drain is connected to the load, and the current flows from the battery through the MOSFET and to the load, completing the circuit. The voltage applied to the gate can be used to control the amount of current flowing through the device, allowing precise control of the load current.

The SI6975DQ-T1-GE3 has two major advantages when compared to traditional BJT-based circuits. First, it has a low parasitic capacitance, which enables it to switch more quickly. Second, since it is a three-in-one device, it requires less wiring and fewer components, making it easier to use and more cost effective. Additionally, the array is qualified to AEC-Q100 standards and is RoHS compliant.

The SI6975DQ-T1-GE3 MOSFET array is a versatile and reliable device that can be used in a wide range of applications. Its low parasitic capacitance and small size make it well suited for high-frequency switching applications such as motor drives and switch-mode power supplies. Its low resistance and robust packaging provide improved efficiency and fault protection. The array is widely used in automotive, lighting, medical, power, and telecommunications applications.

The specific data is subject to PDF, and the above content is for reference

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