SI6975DQ-T1-E3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	4.3A
Rds On (Max) @ Id, Vgs:	27 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:	450mV @ 5mA (Min)
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	830mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

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Overview of SI6975DQ-T1-E3

The SI6975DQ-T1-E3 is an array of p-channel metal oxide semiconductor field effect transistors (MOSFETs). It is available in a 4-channel, 16-lead TSSOP package, displays a drain-source voltage rating of +/- 4V and a gate-source voltage rating of +/- 12V. It features a continuous drain current rating of 500mA, a maximum transient drain current of 1A and power dissipation of up to 1.47W per switch. The SI6975DQ-T1-E3 also displays an on-resistance of 150mΩ, a fast switching speed of 5.5ns and a rise and fall time of 3ns.

Application Field

The SI6975DQ-T1-E3 is an integrated, low-power and cost-effective switch array for a variety of electronics applications. It is suitable for a broad range of switching, switching between power supplies and controlling loads that require precise current and voltage balancing. The fast switching speed and high accuracy of the SI6975DQ-T1-E3 makes it well suited for automated test and measurement systems. The SI6975DQ-T1-E3 can be used as an isolated switch in light-sensitive applications including optical communications, optical sensors, LED drivers and photovoltaic applications. It is also well suited for applications where space or power dissipation is a concern, such as DC-DC converters and power supplies. In addition, the SI6975DQ-T1-E3 can be used to secure audio systems, RGB LED and light dimmers, LCD TV and laptop display backlights, and control circuit applications.

Working Principle

The SI6975DQ-T1-E3 is a single-channel semiconductor device that enables the switching of electrical signals between its controlling terminal (gate) to its controlling terminal (source). It works by having source and drain connectors that are connected together when the gate voltage reaches its threshold voltage (VGS). When a small voltage is applied between the gate and source, a certain amount of current is allowed to flow through the channel created by the MOSFET’s source and drain. This current flows between the two terminals, which turns the switch on. The SI6975DQ-T1-E3 operates with a low input to output capacitance (Ciss), enabling it to switch signals quickly and accurately. Its low power operation makes it ideal for applications that require less power consumption and highly dependable operation. It also offers low on-resistance (Rds_on) and fast switching speeds to ensure that the switch maintains its closed or open state even when it is exposed to transient current spikes or high frequency noise.

Conclusion

The SI6975DQ-T1-E3 is the perfect solution for applications that require fast switching speeds and a low power consumption. It features an advanced architecture, a low input to output capacitance and a low on-resistance. It offers a fast switching speed and accurate control over current and voltage balancing, making it an ideal choice for a wide range of switching, switching between power supplies and controlling loads applications.

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