Allicdata Part #: | SI6955ADQ-T1-E3-ND |
Manufacturer Part#: |
SI6955ADQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V 2.5A 8-TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 2.5A 830mW Sur... |
DataSheet: | SI6955ADQ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 830mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The SI6955ADQ-T1-E3 is an array of Field Effect Transistors, or FETs, capable of switching high-current, low-voltage signals with exceptional efficiency and accuracy. With nine independent N-channel, 24 mΩ MOSFETs, each part can provide high-efficiency power delivery, ranging from 0.3 A to 7 A. Moreover, these devices are capable of switching frequencies up to 10 megahertz and can adjust their turn-on and turn-off times for fast and precise control. So by design, MOSFETs consume less power, creating smaller footprints. This makes them ideal for applications that require high efficiency and small size.
The SI6955ADQ-T1-E3’s working principle is similar to other FETs. A gate voltage is applied to control current flow through the drain and source. When the gate threshold voltage is reached, the channel opens and current flows from the drain to the source. If a negative voltage is applied to the gate terminal, it inverts the threshold voltage and current flows from the source to the drain. Since the on/off state is controlled by the gate voltage, these transistors are said to have voltage controlled performance. Moreover, these devices are also capable of dynamic switching using power MOSFET programmable switches or P-channel MOSFETs.
The SI6955ADQ-T1-E3 has many applications. It is widely used in the automotive industry, where their fast switching times facilitate the precise control of fuel delivery, ignition timing, and emissions control. These devices also have a number of industrial applications such as controlling the speed of motors and adjusting settings on industrial tools. In addition, these devices are used in consumer electronics such as computers, cell phones, and portable gaming devices. Finally, these devices can be used for power management in applications such as LED lighting and power supplies.
In summary, the SI6955ADQ-T1-E3 is an array of Field Effect Transistors that provide high-efficiency power delivery at low voltages. It has a low on-state resistance and fast switching times, enabling precise control of power. Additionally, its nine independent N-channel MOSFETs make it well suited for a variety of applications in the automotive, industrial, and consumer electronics industries.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI6925ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8TS... |
SI6928DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8TSSO... |
SI6943BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6963BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8TS... |
SI6969BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4A 8TSSO... |
SI6981DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6983DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.6A 8TS... |
SI6993DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3.6A 8TS... |
SI6925ADQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8-T... |
SI6928DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8-TSS... |
SI6963BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8-T... |
SI6975DQ-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6975DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6924AEDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 28V 4.1A 8-T... |
SI6981DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6993DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 3.6A 8-T... |
SI6933DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6933DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6943BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6955ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6955ADQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6966DQ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
SI6966DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
SI6966EDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
SI6966EDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
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SI6973DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.1A 8TS... |
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