Allicdata Part #: | SI6983DQ-T1-GE3-ND |
Manufacturer Part#: |
SI6983DQ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 4.6A 8TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.6A 830mW Sur... |
DataSheet: | SI6983DQ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 400µA |
Base Part Number: | SI6983 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 5.4A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.The SI6983DQ-T1-GE3 is a type of transistor array typically classified as a field-effect transistor (FET). Specifically, it is a metal-oxide semiconductor field-effect transistor (MOSFET). It is commonly used in many different applications due to its versatility and ability to work in low-voltage and low-current situations.
A FET is a type of transistor that works on the principle of voltage being applied to the gate to allow a current to flow from the source to the drain. This makes FETs useful as both AC and DC amplifiers. The MOSFET is a type of FET specifically designed for use with voltage. It is more efficient than other types of transistors and is used in more specific applications. The SI6983DQ-T1-GE3 is one such type of MOSFET.
The SI6983DQ-T1-GE3 is used in a variety of applications due to its low voltage and current capabilities, as well as its ability to operate efficiently over long periods of time. It is commonly used in switching applications, such as LED lighting, motor control, and power control. Additionally, it can be used in circuits that require noise suppression or in circuits that require high-frequency operation. Finally, it is also commonly used in radio frequency applications.
In order to operate correctly, the SI6983DQ-T1-GE3 must be properly connected. It is a three-terminal device, with the source, gate, and drain terminals all connected to separate pins on the transistor array. The source terminal is connected to the positive voltage of the circuit, the gate terminal is connected to the control voltage of the circuit, and the drain terminal is connected to the circuit’s output. The current is regulated by the voltage applied to the gate, which causes the FET to operate as either an amplifier or a switch.
The SI6983DQ-T1-GE3 is also designed to be resistant to ESD or electrostatic discharge. This is important in high-voltage and/or low-current applications, where static electricity can cause damage to the circuit. The SI6983DQ-T1-GE3 is designed to withstand up to 40 volts of static electricity, making it quite robust in this type of situation.
Overall, the SI6983DQ-T1-GE3 is a particularly useful type of metal–oxide–semiconductor field-effect transistor with a wide range of applications. Its low voltage and current requirements, coupled with its ability to be used in multiple applications and its resistance to ESD make it a great choice for many different situations. Whether being used for LED lighting, motor control, power control, noise suppression, or radio frequency applications, the SI6983DQ-T1-GE3 is a versatile and reliable transistor array.
The specific data is subject to PDF, and the above content is for reference
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