SI6981DQ-T1-GE3 Discrete Semiconductor Products

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The SI6981DQ-T1-GE3 is a high-performance MOSFET array with integrated logic-level shift capability. The logic-level shift capability allows the device to perform switching operations at either logic-level or TO-220 envelope voltages. The device supports up to 16 individual components, allowing the user to construct a single MOSFET array with a wide variety of control and switching functions. The device also integrates a high-voltage N-channel MOSFET array with an integrated hysteresis circuit and an integrated level shift circuit.

The SI6981DQ-T1-GE3 is designed for use in automotive, telecom, industrial, and medical applications. Its highly integrated design and robust switching performance make it ideal for use in a variety of high-voltage, high-current applications. The device is able to operate in both high-voltage and low-voltage environments and can reliably perform switching operations even in harsh environmental conditions.

The application field of the SI6981DQ-T1-GE3 includes automotive body electronics, industrial control, lighting systems, and consumer electronics. Its versatility makes it ideal for a wide variety of applications, including power management, voltage-level shifting, power conversion, and motor control. It is also suitable for use as a DC-to-DC converter and as a relay driver.

The working principle of the device is based on MOSFET technology. MOSFETs are transistors that can be used as both switches and amplifiers. They are used to control the flow of electrical current in circuits, allowing for the regulation of voltage by controlling the voltage drop across the MOSFET. The SI6981DQ-T1-GE3 makes use of an integrated level shift circuit to switch between logic-level and TO-220 envelope voltages. The device also makes use of an integrated N-channel MOSFET. The hysteresis circuit ensures that the device will switch reliably even in fluctuating environmental and electrical conditions.

In summary, the SI6981DQ-T1-GE3 is a high-performance MOSFET array with integrated logic-level shift capability. The device is designed for use in automotive, telecom, industrial, and medical applications and is ideal for a wide variety of high-voltage and high-current applications. The SI6981DQ-T1-GE3 is based on MOSFET technology and makes use of an integrated level shift circuit and an integrated N-channel MOSFET. The hysteresis circuit ensures that the device will switch reliably even in fluctuating environmental and electrical conditions.

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