SI6925ADQ-T1-E3

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SI6925ADQ-T1-E3 is a n-channel enhancement mode TrenchFET FET Array from Vishay. This device features low on-resistance, fast switching speed, ESD protection and low gate charge Qg. This makes it an ideal choice for designing power switching applications.

The SI6925ADQ-T1-E3 is designed to improve the performance of power circuits by providing either high-speed switching (FET array) or low-on-resistance characteristics (FET array insertion loss). This means that SI6925ADQ-T1-E3 can be used in many applications like boost converters, as well as more traditional applications such as power amplifiers, power relays, switch-mode power supplies and other high power switching applications.

The working principle of SI6925ADQ-T1-E3 is simple and straightforward. The FET array is enabled by an applied gate voltage (VG). This voltage controls the channel conductivity and thereby the overall performance of the FET array. When VG exceeds a certain threshold, the FET array enters an active region and the channel current begins to flow.

The FETs in the array can be arranged in different ways to suit specific applications. Vishay\'s SI6925ADQ-T1-E3 includes four series-connected n-channel Mosfets, which can be arranged as either half-bridge or boost converter or full-bridge configuration. Each FET can be independently controlled by the gate voltage VG and the overall current is determined by the total applied VG.

The SI6925ADQ-T1-E3 is specifically designed to operate in low voltage applications, where the FET array offers low power dissipation and high-speed switching. The array offers ESD protection with the diodes on the gates and drain, and features a maximum drain-source voltage of 10V and a withstands continuous drain current of up to 1.2A. The efficient switching operation of the array also helps to reduce overall power consumption.

The SI6925ADQ-T1-E3 also features reverse H-bridge and load sharing options, which allow designers to integrate multiple FETs in a single array for configuring more complex switching circuits. The array is designed to operate with VDs between 5V and 10V, with a maximum peak current of 25A and a maximum current rating of 1.2A.

The power efficiency of the FET array, combined with its rugged package, makes the SI6925ADQ-T1-E3 an ideal choice for use in power switching applications. This array has been widely used in DC-DC converters and industrial controls, automotive power devices, medical devices, mobile devices, and other emerging applications.

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