SI6968BEDQ-T1-GE3

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The SI6968BEDQ-T1-GE3 is an advanced form of Field-Effect Transistor (FET) device. It is constructed as an array of FETs, and as such forms an important component in the design and construction of electronic circuits and devices. This article will discuss the application field and working principle of the SI6968BEDQ-T1-GE3.

The SI6968BEDQ-T1-GE3 is an N-channel FET array, consisting of 16 FETs arranged in a linear array. The individual FETs are isolated from each other, thus allowing for multiple input signals to be amplified independently. This makes this device well suited for a variety of applications, such as power supplies, switching power amplifiers, digital-to-analog converters, RF amplifiers and analog filters, as well as other analog circuit designs.

The working principle of the SI6968BEDQ-T1-GE3 is based on the FET\'s principle of operation. As a voltage is applied across the Gate-Source of the device, an electric current is allowed to flow between the Drain and Source terminals. By varying the Gate voltage, the channel between Drain and Source can be opened or closed, thus controlling the flow of current. The 16 individual FETs in the array each have their own Gate-Source-Drain connections and can be used to provide multiple gain stages for amplifying and filtering signals.

The SI6968BEDQ-T1-GE3\'s array architecture also makes it well suited for use in applications such as motor control and other switching applications. It has a maximum Gate breakdown voltage of 30V, a maximum Gate leakage current of 40mA and a maximum Drain-Source on-state resistance of 1.2 ohms. This low resistance and high breakdown voltage makes the device suitable for high power switching applications.

In addition, the device has an overloaded breakdown voltage of 200V and a thermal resistance of 0.7 degrees Celsius per watt. This makes the device suitable for high temperature environments, as well as harsh environmental conditions such as low humidity and high levels of dust.

The SI6968BEDQ-T1-GE3 is an important component in the design and construction of electronics circuits and devices. Due to its low resistance and high breakdown voltage, it is suitable for a variety of applications such as power supplies, switching power amplifiers, digital-to-analog converters, RF amplifiers and analog filters, as well as other analog circuit designs. Additionally, its array architecture also makes it suitable for use in motor control and other switching applications.

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