Allicdata Part #: | SI6968BEDQ-T1-E3TR-ND |
Manufacturer Part#: |
SI6968BEDQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 5.2A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5... |
DataSheet: | SI6968BEDQ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Base Part Number: | SI6968 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 6.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) Common Drain |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI6968BEDQ-T1-E3 are integrated circuit (IC) devices made from silicon semiconductor material that are designed for use in a variety of applications. Specifically, the devices are designed to be used in power management and motor control, audio and video, capacitive and resistive sensing, and other control circuits. Commonly referred to as transistors, the SI6968BEDQ-T1-E3 are a type of field effect transistor (FET) known as a metal-oxide-semiconductor field-effect-transistor (MOSFET) array. This article will explain the SI6968BEDQ-T1-E3 application field, working principle, and other operational characteristics.
The SI6968BEDQ-T1-E3 is a device consisting of transistors in an array configuration, which makes them ideal for applications that require a large number of switches to be operated as a single unit. These devices are well suited for use in power management and motor control applications, which require switching of large amounts of current in a very small amount of time. Additionally, they are highly coveted in audio and video circuits, providing superior frequency response and precision when controlling signals. Finally, the low operating temperature of these devices makes them an ideal choice for capacitive and resistive sensing applications, where the accuracy of sensor responses must be maintained for the duration of the device\'s operation.
The working principle of the SI6968BEDQ-T1-E3 is fairly simple. The transistors in the array are connected to a single source of power with input gates, each controlled by a separate command terminal. Each of the transistors may be turned on or off independently, allowing the device to act as multiple switches, or as an analog driver for a motor or laser diode. This allows for a great deal of flexibility in the design of circuits and applications, as the switching and analog drive capabilities are both integrated into a single chip.
The SI6968BEDQ-T1-E3 is engineered to operate at a wide range of temperatures, between -40 and 125 degrees Celsius, and boasts exceptionally low power consumption when not in use. The maximum voltage the device can handle is 25 volts, and the maximum peak drain current it can handle is 5 amps. This allows the device to be used in a multitude of high power applications, while still keeping power consumption low. Additionally, the device features a wide frequency response range of up to 3GHz, allowing for superior precision in audio and video applications.
In summary, the SI6968BEDQ-T1-E3 is an ideal choice for applications that require switching and analog driving capabilities, such as power management and motor control, audio and video, capacitive and resistive sensing, and other control circuits. They feature a wide temperature operating range and low power consumption even when under high loads, and their wide frequency response range provides superior performance in audio and video applications. With their versatility, reliable operation, and easily integrated operation, the SI6968BEDQ-T1-E3 is an excellent choice for modern circuit designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI6924AEDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 28V 4.1A 8-T... |
SI6925ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8TS... |
SI6928DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8TSSO... |
SI6943BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6963BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8TS... |
SI6969BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4A 8TSSO... |
SI6981DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6983DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.6A 8TS... |
SI6993DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3.6A 8TS... |
SI6925ADQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8-T... |
SI6928DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8-TSS... |
SI6963BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8-T... |
SI6975DQ-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6975DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6924AEDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 28V 4.1A 8-T... |
SI6981DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6993DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 3.6A 8-T... |
SI6933DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6933DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6943BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6955ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6955ADQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6966DQ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
SI6966DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
SI6966EDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
SI6966EDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
SI6967DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 8V 8TSSOPMos... |
SI6967DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 8TSSOPMos... |
SI6969BDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 4A 8TSSO... |
SI6969DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 8TSSOPMo... |
SI6969DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 8TSSOPMo... |
SI6973DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.1A 8TS... |
SI6973DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.1A 8TS... |
SI6983DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.6A 8TS... |
SI6968BEDQ-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET 2N-CH 20V 5.2A 8-T... |
SI6954ADQ-T1-GE3 | Vishay Silic... | 0.22 $ | 6000 | MOSFET 2N-CH 30V 3.1A 8TS... |
SI6954ADQ-T1-E3 | Vishay Silic... | -- | 1500 | MOSFET 2N-CH 30V 3.1A 8TS... |
SI6968BEDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 5.2A 8TS... |
SI6926ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 4.1A 8TS... |
SI6926ADQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 4.1A 8-T... |
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