Allicdata Part #: | SI6969BDQ-T1-GE3-ND |
Manufacturer Part#: |
SI6969BDQ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 12V 4A 8TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 4A 830mW Surfa... |
DataSheet: | SI6969BDQ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Base Part Number: | SI6969 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.6A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 12V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI6969BDQ-T1-GE3 is a dual field-effect transistor with high-speed switching capabilities. It is a smaller and more efficient version of the SI6959BDQ-T1-GE3 a popular dual FET used in many applications. The SI6969BDQ-T1-GE3 has a significantly improved gate-source breakdown voltage rating over its predecessor, making it an ideal choice for high speed switching applications.
The SI6969BDQ-T1-GE3 is designed to withstand extreme temperatures and is built with a topology that can be adapted to a wide range of applications. The device is sold in a TSSOP-8 surface mount package and is rated for 0.06A maximum continuous drain current and avalanche rated to 3.2A.
The device has two independent FETs, each with its own gate, source, and drain pins. The FETs are N-channel enhancement-mode types, meaning that the current flowing through the source and drain pins is controlled by the voltage of the gate. When the gate voltage is low, the device is off, but when the gate voltage is high, the device turns on and allows current to pass. The threshold voltage at which the device turns on is typically in the range of 2.5V to 4.0V. The device also has an integrated charge pump, which provides the gate with extra current to help the device switch quickly and reliably.
The SI6969BDQ-T1-GE3 is most commonly used in high-speed digital logic circuits and power switching circuits. Its ability to switch quickly and endure high temps makes it well-suited for use in power supplies, motor control circuits, and other switching applications where fast switching speeds are required. It can also be used in analog circuits as a voltage-controlled switch or voltage-controlled resistor. It is well-suited for use in analog communication systems, where its high temperature endurance can be useful.
The SI6969BDQ-T1-GE3 is a versatile and reliable device that can be used in a variety of circuits. Its small size and low-power consumption make it ideal for use in portable electronics and battery-powered applications. Its high-speed switching capabilities make it well-suited for use in a variety of digital and analog applications. Its ability to withstand extreme temperatures make it well-suited for use in high-temperature and industrial applications. With its wide range of uses, the SI6969BDQ-T1-GE3 is a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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