Allicdata Part #: | SI6926ADQ-T1-E3TR-ND |
Manufacturer Part#: |
SI6926ADQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 4.1A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4.1A 830mW Sur... |
DataSheet: | SI6926ADQ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI6926 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI6926ADQ-T1-E3 is a three-channel field effect transistor (FET) array manufactured by Siemens. It is a combination of three independent FETs that are designed to be connected in parallel and are used to transfer electrical signals or switch loads. Each FET consists of a gate, source, and drain electrodes and is used to control the current flow within a circuit.
The SI6926ADQ-T1-E3 is a popular choice for applications requiring high-power transfer or switching. It is also commonly used in audio, video, and other communication systems. It is well-suited for radio frequency (RF) applications due to its low-noise performance and low-power consumption characteristics. Additionally, its ability to withstand high temperatures make it an ideal choice for applications that involve extended operating periods.
The SI6926ADQ-T1-E3 operates in two modes. In one mode, it acts as a three-way digital switch with on/off control, allowing its user to easily switch signals on and off. In the other mode, it acts as a three-way amplifier, amplifying signals within its range. This is done by utilizing the “common-source” method, wherein each FET acts as an amplifier, strengthening signals within its range.
The SI6926ADQ-T1-E3 is powered through two different sources. The primary source is electrical, with the use of power transistors. The secondary source can be either electrical or mechanical, depending on the application. Using mechanical power sources is especially useful for applications involving extreme temperatures, such as aerospace and robotic applications. This allows for flexibility in the application of the SI6926ADQ-T1-E3, making it suitable for a variety of applications.
The SI6926ADQ-T1-E3 is a versatile device and can be used in a wide range of applications. It is an ideal choice for radio frequency (RF) applications due to its low-noise performance and low-power consumption characteristics. Additionally, its ability to work with a variety of power sources makes it particularly well suited for aerospace, robotics, and similar applications. Its ability to switch and amplify signals also makes it suitable for audio and video applications.
Overall, the SI6926ADQ-T1-E3 is an excellent choice for a variety of applications requiring high-power transfer or switching. Its operation is simple and reliable, and it can be powered by either electrical or mechanical power sources. Additionally, its versatility and ability to amplify signals make it well-suited for both audio and video applications. All these features make the SI6926ADQ-T1-E3 a great choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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SI6925ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8TS... |
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SI6963BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8TS... |
SI6969BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4A 8TSSO... |
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SI6983DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.6A 8TS... |
SI6993DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3.6A 8TS... |
SI6925ADQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8-T... |
SI6928DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8-TSS... |
SI6963BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8-T... |
SI6975DQ-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6975DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6924AEDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 28V 4.1A 8-T... |
SI6981DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
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SI6933DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6943BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6955ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6955ADQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
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SI6966EDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
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