Allicdata Part #: | SI6928DQ-T1-E3TR-ND |
Manufacturer Part#: |
SI6928DQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 4A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface ... |
DataSheet: | SI6928DQ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI6928 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI6928DQ-T1-E3 is a part produced by Power Integrations. It is a three-channel dual N-channel MOSFET array integrated circuit. This unit has numerous features and is targeted at switching applications in PCs and other power electronic components (e.g. motors, relays, etc.). It is well suited for a variety of different applications, and is among the best choices when it comes to selecting an efficient and reliable integrated MOSFET array.
This unit features three channels which are each rated to 230mA. It has very low RDS(on) ratings 50mΩ (Typ) at 4.5V. This makes it a suitable choice for low power applications such as driving small DC motors. The unit also has relatively low gate charge (70pC), drain-to-source voltage of 80V, and an avalanche energy rating of 4mJ.
The SI6928DQ-T1-E3 is well suited for switch-mode power supplies which require high efficiency, fast switching, and low power dissipation. It is a three-channel device which means that it can be used to drive three independent MOSFETs. The device also features a high speed turn-on/off switching capability with a maximum switching frequency of 10MHz. This makes it a suitable choice for high-frequency switch-mode power supplies or motor control designs. It also has a high output charge of eight milliamps which helps to ensure fast transitions and low power losses. In addition, it has an adjustable dead-time function which can be used to reduce EMI and help improve switching efficiency.
The operation of the SI6928DQ-T1-E3 is similar to other integrated MOSFET arrays. The unit operates on a logic level, and when the logic signal is high the device turns on and the current flows through the channel. When the logic signal is low, the device turns off and current flow is blocked. The unit uses a combination of N-channel and P-channel MOSFETs which help to increase switching speed and reduce power losses. The gate driver is a boosted driver which helps to increase the current drive capability of the device. The device has built-in thermal protection which helps to reduce power dissipation and protect the device from thermal overloading.
In summary, the SI6928DQ-T1-E3 is an integrated MOSFET array which is well suited for a variety of high-frequency switching applications. It has low on-resistance, adjustable dead-time function, and a boosted gate driver which help to ensure high current drive capabilities and low losses. This makes it a suitable choice for a wide range of applications, from PC power supplies to motor control designs.
The specific data is subject to PDF, and the above content is for reference
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