Allicdata Part #: | SI6963BDQ-T1-E3TR-ND |
Manufacturer Part#: |
SI6963BDQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 3.4A 8TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.4A 830mW Sur... |
DataSheet: | SI6963BDQ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Base Part Number: | SI6963 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 3.9A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI6963BDQ-T1-E3 is a highly advanced transistor array chip with various application fields. It is made of a dual N-Channel MOSFET which makes it applicable in power management, electronic load switching, and other various logic applications. The transistors have low RDS(ON), which means that they can provide high current handling capability without generating a significant level of power dissipation. In addition, the transistors are protected against ESD (electrostatic discharge) events up to 4KV. This makes SI6963BDQ-T1-E3 an ideal choice for applications in consumer electronics and other delicate, sensitive areas.
SI6963BDQ-T1-E3 is a great choice for any application that needs a wide range of voltage and current operating options. This makes it extremely practical for applications that require flexibility and enhanced performance. Its dual N-Channel MOSFET provides low RDS(ON) and desirable electrical characteristics. It is also capable of surviving through permissive and very restrictive voltage ranges. This makes it a great component choice for various circuits and applications, especially those involving high frequency.
The working principle of SI6963BDQ-T1-E3 is fairly straightforward. The device consists of two N-Channel MOSFETs connected in series. This means that both transistors have a gate, source and drain. The gate controls the flow of current through the transistor and is used to switch the device on or off. When the gate is supplied with voltage, the source and drain will begin to conduct, allowing electrons to flow through the transistor.
The SI6963BDQ-T1-E3 also provides protection against ESD events, which makes it a great choice for any application where very high levels of electrical reliability are required. The chip also supports an over-current protection system, which helps to ensure that the device does not overheat or cause any damage due to excessive current flow. The over-current protection system will shut the device off if a certain amount of current is exceeded.
In conclusion, SI6963BDQ-T1-E3 is a highly advanced transistor array chip that offers multiple applications and various working principles. It has wide operating voltage and current ranges, making it suitable for use in many different applications, including power management and electronic load switching. It is also protected against ESD and provides an over-current protection system for added safety. All of these features make SI6963BDQ-T1-E3 an ideal choice for any application requiring reliable, high performance transistors.
The specific data is subject to PDF, and the above content is for reference
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