SI6983DQ-T1-E3

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The SI6983DQ-T1-E3 is a dual high-side N-channel MOSFET array designed for automotive applications. It offers a wide range of output current, high power efficiency, and fast switching capability. This device, which is AEC-Q100 qualified, is especially suitable for automotive, industrial and home applications such as motor control and lamp dimming. The SI6983DQ-T1-E3 utilizes silicon gate CMOS semiconductor technology for enhanced performance. This dual MOSFET array also provides ESD protection up to 1500V. It is available in a thermally-enhanced 16-pin Power MLPQ-2 (MLPQ-2-16-2.16-1.2) EUIP package and is lead (Pb) free.

The SI6983DQ-T1-E3 is an advanced and highly integrated power MOSFET array. It features two high-side N-channel MOSFETs, each with a breakdown voltage of 20V and a maximum current of 265 mA. The input drive to switch both MOSFETs is low and the two outputs can be switched separately, enabling more efficient power management. The array also features an integrated charge pump that provides an adequate gate drive voltage to the two MOSFETs, even at low input voltage. Additionally, the array includes an open-drain logic output and a low-side MOSFET with an adjustable breakdown voltage (2-20V).

The SI6983DQ-T1-E3’s working principle is based on the voltage-controlled enhancement-mode of operation, which is the foundation of MOSFETs. When the gate voltage is lower than the source voltage, the MOSFET is in its off state. When the gate voltage rises above the source voltage, the channel region inside the MOSFET, also called inversion layer, is opened, allowing current to flow from the source to the drain. The gate voltage needs to be kept above the threshold voltage for the MOSFET to remain in its on state. The gate voltage is determined by the input signal, which could be either DC or AC.

The main application of the SI6983DQ-T1-E3 is in automotive, industrial and home applications. It is mainly used for motor control and lamp dimming, as it can efficiently switch the load with fast response time. It also finds applications in many switching applications such as fan and exhaust controls, on-off switches, and power converters. The wide range of current capability and fast switching time makes it ideal for these applications.

In conclusion, the SI6983DQ-T1-E3 is a dual high-side N-channel MOSFET array designed for automotive, industrial and home applications. It features a wide range of output current, high power efficiency, and fast switching capability. Its working principle is based on voltage-controlled enhancement-mode of operation, which utilises the MOSFET\'s inversion layer. It is mainly used for motor control and lamp dimming in automotive and other switching applications.

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