SI6925ADQ-T1-GE3

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The SI6925ADQ-T1-GE3 is an FET array, specifically a N-channel enhancement mode type, that is most often used as a switching device in a wide range of applications. It features a low gate threshold voltage, low on-state resistance, and excellent gate and drain charge protection. Its specially designed protection diode allows it to securely and reliably switch high currents in short and medium pulse applications, making it an excellent choice for providing reliable switching for power supplies, motor and lighting controls, and other high-current applications.

The SI6925ADQ-T1-GE3 is a four-transistor array, made up of four N-channel MOSFETs in a single package. Each transistor has a drain, source and gate pin, which can be configured in a variety of configurations. The unit can function as two independent dual-transistor levels, or as a single quad-transistor level. Its low threshold and low on-state resistance means that it can switch more quickly, providing more reliable operation in high-frequency and pulse applications. The drain-to-source break-down and gate-to-source break-down voltages also keep performance reliable, even when switching high current levels. Additionally, its extended ratings mean that it can operate at higher drain-source voltages and gate-source voltages than most similar FET arrays.

The SI6925ADQ-T1-GE3 works by controlling the flow of current through the N-channel MOSFETs. When a voltage is applied to the gate of the transistor, it creates an electric field that attracts electrons which become the conducting channel between the drain and the source. If a voltage is then applied to the drain, electrons will be forced through the channel and into the source, creating a current that is proportional to the gate voltage. By controlling the voltage on the gate, the amount of current that can flow through the device can be controlled precisely.

The SI6925ADQ-T1-GE3 is an ideal choice for high-current, pulse applications. Its specially designed protection diode allows it to safely and reliably switch high currents in short and medium pulse applications, making it an excellent choice for use in power supplies, motor and lighting controls, switching power supplies, and other high-current applications. It is also highly reliable and has a wide operating temperature range, making it suitable for use in a variety of environments. Additionally, its extended ratings mean that it can operate at higher drain-source voltages and gate-source voltages than most similar FET arrays, making it an ideal choice for applications that require accurate and precise voltage control.

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