Allicdata Part #: | SI6966EDQ-T1-E3-ND |
Manufacturer Part#: |
SI6966EDQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 1.25W Surface... |
DataSheet: | SI6966EDQ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 5.2A, 4.5V |
Vgs(th) (Max) @ Id: | 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.25W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Base Part Number: | SI6966 |
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The SI6966EDQ-T1-E3 is a three-channel MOSFET transistor array. It is designed to provide high efficiency power switching and is suitable for applications such as voltage regulators, motor controllers, and power amplifiers. The array consists of two N-channel enhancement mode MOSFETs and one P-channel enhancement mode MOSFET. It is designed to handle loads up to 500V and offers fast switching with low on-resistance.
The SI6966EDQ-T1-E3 can be used in a wide variety of applications, including motor and servo control, instrumentation and power supply control. For motor and servo control, the array can be used to control the speed, direction and/or position of a motor. In instrumentation, it can be used as an amplifier, switching circuit, or as a driver for circuits such as LEDs. In power supply control applications, it can be used to regulate the voltage output from a power supply, or to switch between different power sources.
The SI6966EDQ-T1-E3 is a three-stage device, with each stage connected in parallel. Each stage is an "on" configuration, meaning that when the voltage is applied across the drain and source of the device, current will flow in that direction. This is known as a "common source" configuration. The two N-channel MOSFETs are responsible for controlling the current in the same direction while the P-channel MOSFET is responsible for controlling the current in the opposite direction.
The SI6966EDQ-T1-E3 is designed to provide low on-resistance and fast switching of the current. This is accomplished by the use of an internal protection circuit that prevents over-voltage and over-current conditions. This protection circuit also ensures that the transistors operate safely in a range of temperatures and operating conditions. Furthermore, the device has an built-in gate-to-source protection that prevents gate-to-source voltage spikes.
The SI6966EDQ-T1-E3 also offers a wide range of operating temperatures and is able to operate over a temperature range of -40 to +125 degrees Celsius. In addition, it is fully RoHS-6 compliant and is available in the industry standard SOT-23-6 package.
In summary, the SI6966EDQ-T1-E3 is a three-channel MOSFET transistor array that is designed to provide high efficiency power switching. It is suitable for applications such as motor and servo control, instrumentation and power supply control, and offers fast switching with low on-resistance. The device is designed to operate over a wide temperature range and is fully RoHS-6 compliant.
The specific data is subject to PDF, and the above content is for reference
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