SI6954ADQ-T1-GE3

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The SI6954ADQ-T1-GE3 is a MOSFET array device designed and manufactured by Vishay, a leading global manufacturer of semiconductor components. The device consists of two individual N-channel enhancement mode field effect transistors (FETs) which are integrated onto a single die, in a two-by-two array format. This product is useful for a number of applications, such as drive motor systems, sensing transducers, and embedded microcontrollers.

Application Field

The SI6954ADQ-T1-GE3 is suited for a variety of applications. One of its primary applications is in drive motor systems, where it is used to control the speed and direction of rotational force. This is achieved by using the FET array in a bridge circuit configuration, using one FET for the high voltage source, and the other for the ground side of the circuit. It is also commonly used in sensing transducers, as its high current capacity enables it to be used in amplifying and converting low-level signals into higher voltage levels. Furthermore, it is also often used in embedded microcontroller systems, such as in automotive applications where it can be used to switch the current supply in order to reduce power losses.

Working Principle

The SI6954ADQ-T1-GE3 is a enhancement mode FET array, meaning that it requires an external voltage source to operate. When the external voltage is applied to the gate of the FET array, a substantial increase in channel conductivity is observed. The magnitude of the conductivity increase depends upon the applied gate voltage, and can range anywhere between 50 and 200 times the current flow through the channel at zero gate voltage. The device is suitable for use in various high-frequency applications, due to its fast switching response time and low on-resistance characteristics.

In addition, the device is also suitable for use in high voltage switching applications, with a maximum drain-to-source voltage rating of 450V. It is specified to provide a drain current rating of 5.5A and a pulsed drain current rating of 11A. Furthermore, the device is also specified with a junction-to-ambient thermal resistance of 0.6°C/W and an input capacitance of 1500pF.

The SI6954ADQ-T1-GE3 is constructed using Vishay’s advanced design and manufacturing technology. It is available in a 4-pin PowerPAK SC75 package, with a wide range of temperature ratings, and is provided with a choice of four threshold voltage grades.

Conclusion

The SI6954ADQ-T1-GE3 is an advanced, integrated MOSFET array device manufactured by Vishay. It is designed for use in a variety of applications, such as drive motor systems, sensing transducers, and embedded microcontrollers. The device is specified with a maximum drain-to-source voltage rating of 450V and a drain current rating of 5.5A. It is provided with a choice of four threshold voltage grades, and is available in a 4-pin PowerPAK SC75 package. Its fast switching response time and low on-resistance characteristics make it suitable for use in various high-frequency applications.

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