Allicdata Part #: | SI6933DQ-T1-GE3-ND |
Manufacturer Part#: |
SI6933DQ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V 8-TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 1W Surface Mo... |
DataSheet: | SI6933DQ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The SI6933DQ-T1-GE3 is a field effect transistor (FET) array specifically designed for high speed, low power, and low noise operation. Operating from a single power supply, the FETs are configured to provide a non-inverting gain of 10 V/V. The FETs feature a single gate input and the option of a single or double gate output for circuit flexibility and ease of use. The array offerrs very low noise, excellent capacitance and a wide bandwidth. It also features a high-quality constant linear center tap, which reduces common-mode noise. Additionally, each gate element can be individually disabled via a gate control input.
This FET array is excellent in a range of applications such as automotive and avionic systems, radio frequency and microwave applications, and robotics. Applications include step attenuators and switch matrices, RF amplifiers, voltage-controlled oscillators, filter circuits, and crosspoint switches. It is suitable for very low-current switching applications due to its low power consumption, as well as for digital signal processing applications.
The SI6933DQ-T1-GE3 has a unique construction which allows it to demonstrate superior performance when compared to other FET array devices. It consists of three transistors in a single package, each with its own gate and source connections for direct access without the need for extra components. The center tap of the transistor array allows for faster rise times and better output impedance characteristics. The low input capacitance helps to maintain signal integrity and reduce crosstalk, while the low voltage threshold makes it an ideal choice for low-voltage applications.
The working principle of the SI6933DQ-T1-GE3 is relatively simple. A voltage is applied to the gate of the transistor, which in turn controls the flow of electrons from the source to the drain. This operation can be thought of as a switch which is either "on" or "off" depending on the applied voltage. When the switch is in the "on" position, current can flow through the drain and source, while when it is in the "off" position, no current can flow. In this way, the logic state of the gate determines the logic state of the output, making these FET arrays ideal for digital logic circuitry.
In conclusion, the SI6933DQ-T1-GE3 is a versatile FET array which offers excellent high speed, low power and low noise operation. Its unique construction allows it to be used in a wide range of applications from automotive and avionic systems to robotics and digital signal processing. Its operation involves the application of a voltage to the gate of the transistor, which in turn controls the current flow from the source to the drain. It is an ideal choice for low-voltage, low-current switching applications, as well as radio frequency and microwave applications.
The specific data is subject to PDF, and the above content is for reference
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