SI6967DQ-T1-E3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	8V
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	30 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	1.1W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

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SI6967DQ-T1-E3 Application Field and Working Principle

The SI6967DQ-T1-E3 is a type of Silicon MOSFET Array, or Silicon MOSFET, which stands for metal-oxide-semiconductor field-effect transistors. MOSFETs are considered to be one of the most important types of semiconductor devices due to their wide range of applications, due to their low power consumption, high switching speed, high input impedance, and low voltage drop. MOSFETs are commonly used in many different applications including electronic switching, amplifying, controlling, and motor drive applications. In order to be able to more efficiently and effectively power control needs, MOSFETs must be integrated into arrays, where multiple MOSFETs can be combined into one chip. The SI6967DQ-T1-E3 is an example of such a MOSFET array, featuring an array of three independent n-channel depletion mode, low-voltage, low-gate threshold-voltage MOSFETs, for use as electronic switches, amplifiers, and motor drives.This MOSFET array is designed to be used in applications that require low static and dynamic power consumption, low voltage drop, and low gate threshold voltage, at relatively low current ranges, up to 1500mA. Its operation range is between 3V and 6V, and it is designed to operate at temperatures ranging from -55°C to 125°C. The working principle of a MOSFET array is quite simple. Basically, a MOSFET array consists of transistors that are connected in series with each other, and are all connected to a current source. As a result, each transistor operates independently in order to control the current that is flowing through it. For example, for the SI6967DQ-T1-E3 MOSFET array, each transistor is able to control the current that is flowing through it, and is able to switch between high and low logic levels, depending on the incoming logic signal. This allows for higher precision control of the current flow, which makes for a more efficient operation of the overall array. In conclusion, the SI6967DQ-T1-E3 is a MOSFET array well-suited for low-power, low-voltage applications. It is designed to operate in a wide temperature range, and can control current flow with great precision. As a result, the SI6967DQ-T1-E3 is a great choice for motor drives, amplifiers, and other electronic switching applications.

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