Allicdata Part #: | SI7862ADP-T1-GE3-ND |
Manufacturer Part#: |
SI7862ADP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 16V 18A PPAK SO-8 |
More Detail: | N-Channel 16V 18A (Ta) 1.9W (Ta) Surface Mount Pow... |
DataSheet: | SI7862ADP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 16V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 29A, 4.5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 7340pF @ 8V |
FET Feature: | -- |
Power Dissipation (Max): | 1.9W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
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The SI7862ADP-T1-GE3 is a small form factor, low on-resistance power MOSFET especially designed for high efficiency, low noise and low dissipation in small and medium loads. This MOSFET maintains low voltage drops even at high currents, allowing for increased efficiency of the switching power supply. SI7862ADP-T1-GE3 can be used in various applications such as power switches, output power transistors, power management, active splash protection, and kind of other low voltage low power circuits.
The SI7862ADP-T1-GE3 is a single enhancement mode power MOSFET. Its source is connected to the gate and the drain is connected to the body. The voltage applied to the gate controls whether the MOSFET is in “on” or “off” state. When the gate voltage is greater than the body voltage, the MOSFET will be “on” and the current will flow from source to drain. When the gate voltage is lower than the body voltage, the MOSFET will be “off” and no current will flow. Since the gate voltage does not need to be high, the power dissipation of the device is low.
The SI7862ADP-T1-GE3 MOSFET can be used in several application fields including automotive, energy, consumer electronics, communication, and power management. In automotive, it can be used in applications such as DC-DC converters, engine control, transmission control, and EGR systems. In consumer electronics, it can be used in solenoid and motor control, LCD display illumination control, and bi-directional level shifters. In power management, it can be used in power switches, output power transistors, active splash protection, and low voltage low power circuits.
In the communication field, the device can be used for broadband amplifiers, HF and RF amplifier input/output stages. SI7862ADP-T1-GE3 MOSFET is designed to minimize noise, reduce hot spot temperature and minimize on-resistance drops. It also has an improved linearity that makes it an ideal choice for high speed applications.
The SI7862ADP-T1-GE3 is an economical, low voltage, and low power MOSFET. It is a great choice for applications requiring low power but high efficiency. Its low voltage drop and great thermal performance make it an ideal choice for many different applications. It can be used for a broad range of applications, including automotive, energy, consumer electronics, communication and power management.
The specific data is subject to PDF, and the above content is for reference
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