SIHP17N60D-GE3

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The SIHP17N60D-GE3 is a high-performance N-channel enhancement mode power MOS transistor. It is renowned for its ability to handle high voltages and currents, making it a great choice for a wide range of applications.

This particular device has a maximum Voltage rating of 17V and a maximum Drain Current rating of 60A. It also has a RDS(on) Max rating of 0.01Ω/3Ω/6Ω. With its low RDS(on) Max rating and high voltage and current ratings, it can be used for a variety of power related applications, such as motor control, inverter circuits, and other sensitive electronics.

The SIHP17N60D-GE3’s most distinguishing feature is its construction. It is constructed from a monolithic device, meaning it is basically made up of one piece of material. This material is usually silicon-based, which gives it excellent thermal and electrical characteristics. The monolithic construction allows the device to handle large amounts of current while maintaining its relatively small size.

The working principle of the SIHP17N60D-GE3 is not much different from that of any other MOS transistor design. It is an enhancement-mode MOSFET that uses an electrical signal to control the flow of electrical current through the device. When a positive gate signal is applied to the gate pin, a current flows across the channel region, causing the transistor to turn "on". This allows current to flow from the drain terminal to the source terminal, which is known as "on-state" operation. When the gate signal is removed, the transistor turns "off", prohibiting current from flowing from drain to source.

The SIHP17N60D-GE3 MOS transistor is a great choice for a wide range of applications, due to its ability to handle large amounts of current and its small size. Its versatility makes it suitable for not only motor control and inverter circuits, but also for power supplies, dc/dc converters, and a variety of other electronic applications.

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