ZXMN10A11KTC Discrete Semiconductor Products

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The ZXMN10A11KTC is a single N-channel MOSFET (metal oxide semiconductor field effect transistor). MOSFETs combine elements of both bipolar junction transistors (BJT) and field effect transistors (FET) to form a unique electronic switching device. MOSFETs have a “gate” which, when activated, allows current to flow between the “source” and “drain” terminals. The ZXMN10A11KTC has been designed for applications that require low on-resistance, high speed switching, low noise, and high robustness.

The ZXMN10A11KTC is typically used in DC-DC converters, motor drivers, digital logic interfaces, vehicle electronics and switcher power supply applications. Its low on-resistance and a Max RDS(on) of 10mΩallows the ZXMN10A11KTC to be used in a wide range of applications to provide efficient load switching, while its wide gate drive voltage range (1.5-5.5V) means it can be driven directly by most logic levels.

The ZXMN10A11KTC is available in a dual temperature TO-252 package, offering two operating temperatures of -55°C to +150°C. Its on-resistance is relatively low, making it suitable for applications requiring high efficiency, while its high speed switching capability means it can provide fast and accurate responses.

The working principle of the ZXMN10A11KTC is relatively straightforward, as MOSFETs are voltage-controlled devices. When a voltage is applied to the Gate terminal, it creates an electric field which “attracts” electrons from the Drain terminal. These electrons form what is known as an “inversion layer”, which acts as a “gatekeeper” between the Source and Drain terminals. The width of this layer is proportional to the voltage applied across the Gate terminal, and is referred to as the MOSFETs “gate voltage”. This inversion layer reduces the resistance between the Source and Drain terminals, effectively “opening the gate” and allowing current to flow.

The ZXMN10A11KTC has a maximum VGS rating of ±20V, which means it is suitable for most logic levels. The device has an operating temperature range of -55°C to +150°C and has a low on resistance of 10mΩ, making it suitable for high current applications. Its maximum Drain-Source breakdown voltage (BVDSS) is 30V which ensures it can switch high voltages efficiently and safely. The device also features a very low “Miller capacitance” and fast switching speeds, making it suitable for high speed applications.

In summary, the ZXMN10A11KTC is a single N-channel MOSFET thermal and operating range suitable for a wide range of applications requiring low on-resistance, high speed switching and high robustness. It is capable of switching high voltages and currents efficiently, and its low Miller capacitance and fast switching speeds make it suitable for high speed applications.

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