ZXMN2B01FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN2B01FTR-ND |
Manufacturer Part#: |
ZXMN2B01FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 2.1A SOT23-3 |
More Detail: | N-Channel 20V 2.1A (Ta) 625mW (Ta) Surface Mount S... |
DataSheet: | ZXMN2B01FTA Datasheet/PDF |
Quantity: | 18000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 4.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ZXMN2B01FTA transistors are field-effect transistors, mainly used in motor control, server applications, and power management.
Field-effect transistors (FETs) are active semiconductor devices that use an electric field to control the flow of electrical current. FETs are commonly used in switching circuits and amplifier circuits, controlling the current at the gate of the transistor.
The ZXMN2B01FTA consists of a source terminal, gate terminal, and drain terminal, the gate being the common point where the voltage can be applied. Applying a low voltage to the gate changes the electrical characteristics of the device, allowing it to be employed as a switch, amplifier or to produce a variety of other circuits.
The FET is considered a type of unipolar transistor since current flows through the transistor in only one direction. It is also known as a voltage-controlled device, since the voltage applied to the gate controls the current through the device.
A ZXMN2B01FTA is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In other words, it is an insulated gate type of FET, where the gate is electrically isolated from the rest of the semiconductor structure. This insulation allows the transistor to be operated in its enhanced mode, allowing higher switching speeds and better temperature stability.
When power is applied to the drain and source, a capacitor is formed between the gate and the source terminals. This capacitor is called the gate capacitance, and its value is affected by the size of the device, the doping of the substrate, and the dielectric of the insulating material between the gate and substrate.
The working of the ZXMN2B01FTA can be explained as follows: when a voltage is applied to the gate, a voltage is also developed between the source and the drain. This causes a current to flow between the two terminals, which then increases or decreases with the voltage applied to the gate.
By controlling the voltage at the gate, the current flowing between the source and drain can be regulated. In this way, the ZXMN2B01FTA transistor can be used as a switch, controlling the on/off state of the circuit, or as an amplifier, controlling the strength of a signal.
The ZXMN2B01FTA has a wide range of applications in motor control, server applications, and power management. It can be used as a switch to control electric motors, as an amplifier for audio applications, and as an adjustable current source for power management.
In summary, the ZXMN2B01FTA is an integrated single field-effect transistor (FET) used for a wide range of applications. It is a type of Metal Oxide Semiconductor (MOSFET) that requires a low voltage applied to the gate to change the electrical characteristics of the device. It is used as a switch, amplifier, and adjustable power supply in motor control, audio, and power management applications.
The specific data is subject to PDF, and the above content is for reference
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