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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SUP53P06-20-GE3 -ND	SUP53P06-20-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.2A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
SUP53P06-20-E3- ND	SUP53P06-20-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.2A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	4990 Order	--
SPD30N03S2L20IN TR-ND	SPD30N03S2L-20	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2V @ 23A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
568-9800-5-ND	BUK7520-100A,12 7	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4373pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IXFR75N10Q-ND	IXFR75N10Q	IXYS	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: ISOPLUS247	1000 Order	1+: $0
IXFD80N10Q-8XQ- ND	IXFD80N10Q-8XQ	IXYS	View more Series: HiPerFET Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Operating Temperature: 150C (TJ) Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
5X49_BG7002B-ND	5X49_BG7002B	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
IXTE250N10-ND	IXTE250N10	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 250A Power Dissipation (Max): 730W Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	1000 Order	10+: $13.986
IRFR24N10D-ND	IRFR24N10D	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IXTC180N10T-ND	IXTC180N10T	IXYS	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Power Dissipation (Max): 150W (Tc) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220 Package / Case: ISOPLUS220	1000 Order	1+: $0
IXTU44N10T-ND	IXTU44N10T	IXYS	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 44A (Tc) Vgs(th) (Max) @ Id: 4.5V @ 25A Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IXTT36P10-ND	IXTT36P10	IXYS	View more Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	30+: $3.9656
IXTH75N10-ND	IXTH75N10	IXYS	View more Series: MegaMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	43 Order	--
1727-7166-2-ND	BUK7620-100A,11 8	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4373pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.5797
IXTH60N10-ND	IXTH60N10	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	30+: $14.2626
IXTT75N10-ND	IXTT75N10	IXYS	View more Series: MegaMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	30+: $17.9575
IXFH75N10Q-ND	IXFH75N10Q	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	1000 Order	--
IXTC75N10-ND	IXTC75N10	IXYS	View more Series: MegaMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220 Package / Case: ISOPLUS220	1000 Order	--
RJK1052DPB-00#J 5TR-ND	RJK1052DPB-00#J 5	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4160pF @ 10V Power Dissipation (Max): 55W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	1+: $0
497-14991-2-ND	STL8N10F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V Power Dissipation (Max): 3.5W (Ta), 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.5956
IXFH75N10-ND	IXFH75N10	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	690 Order	--
IXTT60N10-ND	IXTT60N10	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	30+: $7.6398
STH52N10LF3-2AG -ND	STH52N10LF3-2AG	STMicroelectronics	View more Series: STripFET F3 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.6303
ZVP3310ASTOA-ND	ZVP3310ASTOA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
ZVP3310ASTOB-ND	ZVP3310ASTOB	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
ZVP3310ASTZ-ND	ZVP3310ASTZ	Diodes Incorporated	View more Packaging: Tape & Box (TB) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
ZVP3310FTC-ND	ZVP3310FTC	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 330mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
NP70N10KUF-E1-A Y-ND	NP70N10KUF-E1-A Y	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
NVD6824NLT4G-VF 01OSTR-ND	NVD6824NLT4G-VF 01	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8.5A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3468pF @ 25V Power Dissipation (Max): 3.9W (Ta), 90W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.4922
ZVP3310FTR-ND	ZVP3310FTA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 330mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
ZVP3310A-ND	ZVP3310A	Diodes Incorporated	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	4921 Order	1+: $0.5103 10+: $0.4435 100+: $0.3423 500+: $0.2536 1000+: $0.2029
SIR871DP-T1-GE3 -ND	SIR871DP-T1-GE3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3395pF @ 50V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	6000+: $0.632
APTML10UM09R004 T1AG-ND	APTML10UM09R004 T1AG	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 154A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power Dissipation (Max): 480W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	1000 Order	1+: $0
2N6901-ND	2N6901	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.07A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 5V Vgs (Max): 10V Power Dissipation (Max): 8.33W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	--
2N7236U-ND	2N7236U	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	1000 Order	1+: $0
2N6756-ND	2N6756	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	1000 Order	--
2N6788-ND	2N6788	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
2N6788U-ND	2N6788U	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
IRFD9123-ND	IRFD9123	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Mounting Type: Through Hole Supplier Device Package: 4-HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1000 Order	--
STP185N10F3-ND	STP185N10F3	STMicroelectronics	View more Series: STripFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Vgs (Max): 20V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1000+: $1.064

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