Model 555 single oscillator - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SI5481DU-T1-E3T R-ND	SI5481DU-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5459DU-T1-GE3 TR-ND	SI5459DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 52 mOhm @ 6.7A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc) Operating Temperature: -50C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	3000 Order	3000+: $0.1628
SI5418DU-T1-GE3 TR-ND	SI5418DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	--
SI5482DU-T1-E3T R-ND	SI5482DU-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5415AEDU-T1-G E3TR-ND	SI5415AEDU-T1-G E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -50C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	15000 Order	--
SI5415EDU-T1-GE 3TR-ND	SI5415EDU-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -50C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	--
SI5484DU-T1-E3T R-ND	SI5484DU-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5411EDU-T1-GE 3TR-ND	SI5411EDU-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 105nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 6V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -50C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	9000 Order	--
SI5442DU-T1-GE3 TR-ND	SI5442DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	36000 Order	--
SI5480DU-T1-GE3 -ND	SI5480DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	--
SI5485DU-T1-GE3 -ND	SI5485DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5479DU-T1-GE3 -ND	SI5479DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5481DU-T1-GE3 -ND	SI5481DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5476DU-T1-E3T R-ND	SI5476DU-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5410DU-T1-GE3 TR-ND	SI5410DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	3000+: $0.3449
SI5448DU-T1-GE3 TR-ND	SI5448DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 20V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	6000 Order	3000+: $0.166
SI5485DU-T1-E3T R-ND	SI5485DU-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5446DU-T1-GE3 -ND	SI5446DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	6000+: $0.1809
SI5482DU-T1-GE3 -ND	SI5482DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
SI5480DU-T1-E3T R-ND	SI5480DU-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	--
SI5484DU-T1-GE3 -ND	SI5484DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
JANTXV2N6788U-N D	JANTXV2N6788U	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
JANTX2N6788-ND	JANTX2N6788	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	--
JAN2N6788-ND	JAN2N6788	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
SIHF12N50C-E3-N D	SIHF12N50C-E3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 555 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V Power Dissipation (Max): 36W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	--
JANTX2N6788U-ND	JANTX2N6788U	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
JANTXV2N6790-ND	JANTXV2N6790	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	1000 Order	--
SIHB12N50C-E3-N D	SIHB12N50C-E3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 555 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
SIHP12N50C-E3-N D	SIHP12N50C-E3	Vishay Siliconix	View more Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 555 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3	629 Order	--
JAN2N6790U-ND	JAN2N6790U	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
JANTXV2N6790U-N D	JANTXV2N6790U	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
JANTX2N6790U-ND	JANTX2N6790U	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
JAN2N6788U-ND	JAN2N6788U	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
JANTXV2N6788-ND	JANTXV2N6788	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
JANTX2N6790-ND	JANTX2N6790	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
JAN2N6790-ND	JAN2N6790	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/555 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
SIA445EDJT-T1-G E3-ND	SIA445EDJT-T1-G E3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 16.7 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V Power Dissipation (Max): 19W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Single Package / Case: PowerPAK SC-70-6	1000 Order	6000+: $0.1121
IRFH7923TRPBFCT -ND	IRFH7923TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A (Ta), 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	1000 Order	--
SQA470EJ-T1_GE3 TR-ND	SQA470EJ-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 20V Power Dissipation (Max): 13.6W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Single Package / Case: PowerPAK SC-70-6	1000 Order	3000+: $0.128
SQA470EEJ-T1_GE 3TR-ND	SQA470EEJ-T1_GE 3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 56 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Power Dissipation (Max): 13.6W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Single Package / Case: PowerPAK SC-70-6	1000 Order	3000+: $0.128

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