BUK7619-100B,118 Discrete Semiconductor Products

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The BUK7619-100B,118 is an N-channel enhancement mode MOSFET which stands for Metal Oxide Semiconductor field-effect transistor. It was designed to be used in a wide range of applications, such as switch and amplifier circuits, power management, and more. It belongs to Transistors - FETs, MOSFETs - Single category.

This MOSFET has a max drain source voltage of 100 V, and a max drain current of 6 A. It is capable of providing high efficiency and low power dissipation with its low drain-to-source on-resistance of 8 mΩ at 4.5 V gate-to-source voltage. Additionally, this MOSFET is equipped with a symmetrical silicon MOSFET layout and MicroSmart Packaging technology, making it a high performance and power device.

The working principle of this MOSFET is that it makes use of the electric field that is created by a voltage applied to its gate to control the flow of current from the source to the drain. In other words, it acts as a switch that turns on when the gate-to-source voltage is applied, and turns off when the voltage is removed. This principle of operation allows for precise control of the current flow in the device.

The BUK7619-100B,118 MOSFET has a wide range of applications, including motor control, audio amplification, power electronics, and home appliance systems. It is an ideal choice for various electronic circuits, especially those requiring high current, low power dissipation and high efficiency. Additionally, the precise control it offers over the amount of current supplied makes it an ideal choice for applications in the automotive, communications, and industrial sectors.

In summary, the BUK7619-100B,118 is an N-Channel enhancement mode MOSFET designed for a wide range of applications, such as switch and amplifier circuits, power management, and more. It belongs to Transistors - FETs, MOSFETs - Single category. This MOSFET is equipped with a symmetrical silicon MOSFET layout and MicroSmart Packaging technology, making it a high performance and power device. It is an ideal choice for various electronic circuits, especially those requiring high current, low power dissipation and high efficiency.

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