BUK764R3-40B,118 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6580-2-ND |
Manufacturer Part#: |
BUK764R3-40B,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 40V 75A D2PAK |
More Detail: | N-Channel 40V 75A (Tc) 254W (Tc) Surface Mount D2P... |
DataSheet: | BUK764R3-40B,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 254W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4824pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK764R3-40B,118 is a single high voltage MOSFET composed of a vertical n–channel MOSFET and a silicon diffused resistor in the type TO-264AB (D2-Pak III) package. This MOSFET is very suitable to be used as an electronic switch in switching circuits with load currents of up to 40A. In addition, the MOSFET offers excellent reliability, with an insulation voltage of between 600V and 700V, as well as due to its low on-state resistance and very low capacitance.
The MOSFET is typically used in high power switching applications such as those involving inductive loads, or in rectifier circuits. Its operation is based on the weak inversion of drain current-gate voltage characteristics. This means that under no load conditions, the MOSFET can operate in linear mode and offer a low inversion threshold voltage. When the load is applied, the device switches from a linear to a saturated state. The MOSFET offers very low switching losses, since it does not require additional gate drive voltage for switching operations.
A wide variety of applications can benefit from this MOSFET. These include: switching power supply, DC-DC converters, audio power amplifiers, linear power supplies, UPS systems, motor controllers, and high frequency switching. In these and similar applications, the MOSFET provides improved power efficiency and longer operation time.
The MOSFET has an integrated ESD protection that ensures that all its components remain in an off-state during an ESD event. In addition, this protection allows the MOSFET to recover quickly after an ESD event. The gate-source diode also provides additional protection of the device from over-voltage sources.
The MOSFET can also be used to design low-power, low-voltage switching applications. These applications include analog and digital circuits, MOS memory elements, and VLSI design. For these applications, the MOSFET has an efficient on-state resistance and low gate input capacitance. This reduces the power dissipation during switching, enabling these applications to operate more efficiently.
The BUK764R3-40B,118 provides a cost-efficient solution for high power switching applications. Its integrated features and wide variety of applications make it an ideal choice for high power switching. With its low on-state resistance and low switching losses, it is able to provide high efficiency and reliability during operations. Hence, this MOSFET can be used to design power supplies and switching circuits with high efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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