DMN10H220LVT-7 Discrete Semiconductor Products

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DMN10H220LVT-7 (hereinafter referred to as DMN10H220LVT) is a MOSFET transistor for single-channel applications, manufactured by DELTA Electronics. It was designed for high voltage power switching applications and is used in a wide range of electrical systems, from industrial and automotive to consumer electronics.

The DMN10H220LVT is a N-channel MOSFET, JFET-technology, which is capable of operating at high switching frequencies (up to 10MHz) and providing very high current density (up to 800A/cm2). It has high input and output impedance, low power dissipation and excellent thermal performance.

One of the most important characteristic of the DMN10H220 LVT is its low threshold voltage. The low threshold voltage makes the DMN10H220LVT suitable for a wide range of applications, including power management and power supply circuits, DC-DC converters, high frequency switching applications and switching of high current loads.

The working principle of the DMN10H220LVT is based on its JFET-technology. In a JFET structure, the source, drain and gate terminals are connected together in a three-terminal arrangement. The gate terminal is charged or discharged depending on the relative voltage between the source and drain terminals, which is also known as the "gate-source voltage".

When the gate-source voltage is higher than the threshold voltage, the channel opens and current starts to flow from the source to the drain. This phenomenon is known as the "forward-bias" of the DMN10H220LVT. On the other hand, when the gate-source voltage is lower than the threshold voltage, the channel opens but current stops flowing. This phenomenon is known as "reverse-bias".

One of the main advantages of the DMN10H220LVT is its low "on-resistance" or "drain-source resistance". This is a measure of how difficult it is for the transistor to switch a current on and off. The low on-resistance of the DMN10H220LVT makes it suitable for high-speed switching applications and high power switching applications.

The DMN10H220LVT is also suitable for use in applications that require very low power consumption. This is because the transistor has a low gate-drain capacitance, which results in low power consumption. Additionally, the DMN10H220LVT is capable of operating at temperatures up to 250°C, making it suitable for high-temperature applications.

Overall, the DMN10H220LVT is a versatile and reliable transistor that is suitable for a wide range of applications, from power management to high current switching. It has a low threshold voltage, low on-resistance and a very low gate-drain capacitance, which makes it suitable for high-speed and low power applications. Additionally, the DMN10H220LVT is capable of operating at high temperatures, making it suitable for applications that require high temperature operation.

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