Allicdata Part #: | FQP10N20-ND |
Manufacturer Part#: |
FQP10N20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 10A TO-220 |
More Detail: | N-Channel 200V 10A (Tc) 87W (Tc) Through Hole TO-2... |
DataSheet: | FQP10N20 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 87W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP10N20 is a N-channel enhancement mode MOSFET that is manufactured by Fairchild Semiconductor. This device is suitable for use as a power switch in a wide variety of applications and is packaging in the insulated TO-220 package.
The FQP10N20 has a breakdown voltage of 400V and it is capable of handling currents of up to 10A. This high voltage and current rating make the device suitable for a broad range of high power applications. The device also has a low on-resistance of 9.2 mOhms which minimizes losses associated with power switching.
In order to understand how the FQP10N20 operates its important to understand the working principles behind Transistors. Transistors are a type of solid-state semiconductor device containing three terminals known as the source, the gate and the drain. The source and drain terminals are externally connected to the device, while the gate terminal is connected to an internal layer of the transistor.
The FQP10N20 is an enhancement-mode MOSFET, which means it operates in a nonconductive mode when no gate voltage is applied. This means that when no voltage is applied to the gate terminal, the device is off and no current will flow between the source and the drain.
When a gate voltage is applied, the device will enter a conductive state. In this state, the voltage applied to the gate terminal decreases the resistance between the source and the drain, allowing charge to flow freely between them. The current flow between the source and the drain is known as the drain current and it is controlled by the gate voltage.
The FQP10N20 has a wide range of applications, from automotive systems to consumer electronics. The device is also suitable for industrial environments, such as motor and solenoid drive systems, where it can be used as an actuator for controlling valves and motors.
The device can also be used for switching power, for example, in applications such as DC-DC converters. The device can be used to switch between two power sources and to control current flow between them. The device is also suitable for use as an inverter in battery powered applications, such as LED lighting.
The FQP10N20 is a versatile device that can be used in a variety of applications. Its high voltage and current ratings, along with its low on-resistance make it an ideal choice for a wide range of applications. The device is also relatively simple to use, allowing it to be integrated into existing systems with minimal configuration.
The specific data is subject to PDF, and the above content is for reference
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