FQP12P20 Allicdata Electronics
Allicdata Part #:

FQP12P20-ND

Manufacturer Part#:

FQP12P20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 200V 11.5A TO-220
More Detail: P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole T...
DataSheet: FQP12P20 datasheetFQP12P20 Datasheet/PDF
Quantity: 659
Stock 659Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 470 mOhm @ 5.75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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FQP12P20 is a MOSFET (metal–oxide–semiconductor field-effect transistor) device type. It is a single N-Channel MOSFET, which is designed to minimize the on-state resistance. This feature allows the device to provide an optimal combination of high efficiency and low operating power.

FQP12P20’s are designed for high current switching applications. This type of device is ideal for battery-powered devices, such as laptops, PDAs, and mobile phones, as they require efficient power management. They can handle currents up to 20A, though their design and packaging limit this current to 12A. They are capable of operating from breakdown voltages of −20V, and have an Rds(on) of 4.5mΩ at 10V.

FQP12P20 of MOSFETs operate on an unipolar (or single-carrier) mechanism. The majority carriers for this type of device are electrons, because the applied voltage (gate voltage) increases the number of electrons entering the channel region from the source side. The electrons accumulate in the channel region and the voltage across the MOSFET increases until the current flow remains the same, even if the gate voltage is increased. The resulting increase in the number of electrons and their associated electric field cause a decrease in the amount of current flowing through the channel.

MOSFETs of this type have a very low input capacitance Li, which is the key parameter that determines the switching speed of the device. The lower the input capacitance, the faster the device can switch. In addition, the gate charge and gate gate resistance determine the speed of the device’s turn-on and turn-off speed, respectively.

The shallow body layer of the FQP12P20 MOSFET allows for a high output swing voltage and wide range of operating voltages. It is also an ideal choice for power supplies, motor control applications and for heavy load switching. The low Rds(on) of 4.5mΩ at 10V allows for greater efficiency in high-current applications.

The FQP12P20 MOSFET can be used for a variety of applications because of its high current handling capability, low on-state resistance, input capacitance and wide operating range. It can be used in peak current-sensing applications, such as motor control and in various types of power supplies, load switches and charging applications. It is an excellent choice for automotive applications and mobile phone applications, because of its low power consumption and high efficiency. It can also be used in high current audio amplifiers, energy-saving lighting systems and sign boards control.

The specific data is subject to PDF, and the above content is for reference

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