Allicdata Part #: | FQP16N15-ND |
Manufacturer Part#: |
FQP16N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 16.4A TO-220 |
More Detail: | N-Channel 150V 16.4A (Tc) 108W (Tc) Through Hole T... |
DataSheet: | FQP16N15 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 108W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 8.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.4A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP16N15 is a field effect transistor (FET) belonging to the MOSFET (metal-oxide-semiconductor field-effect transistor) family. It is a type of single transistor, a component widely used in microelectronics due to its relatively low cost and highly versatile nature. This article discusses the application field and working principle of the FQP16N15.
The FQP16N15 is primarily used in applications requiring advanced power management, such as automotive and industrial instrumentation. Its electrical and physical parameters make it ideal for use as a switch for DC and low- frequency AC applications. It features a 16A current rating, a high dielectric withstand voltage, low input and output capacitances for fast switching speeds, and a wide drain-source break-down voltage range of 45V to 100V. It also features a maximum junction temperature of 175°C. These characteristics make it suitable for use in power supply protection circuits, DC motor control, and driver applications.
The FQP16N15 is based on a four-layer semiconductor structure. It is composed of an N-type source, a P-type substrate, an N-type drain, and a metal gate. The structure of the transistor is such that, when the gate is held at a negative potential, the drain-to-source region is pinched off by inhibiting majority carriers. This effectively disconnects the drain and source, thus forming an inverted switch. As a result, when the gate voltage is applied, the flow of current can be controlled.
In addition, the FQP16N15 utilizes an effective current control system with MOSFETs, which can be adjusted depending on the gate voltage. This current control system allows the FQP16N15 transistor to provide an accurate and steady current, thus making it suitable for applications that require precision current control such as DC motor driver circuits, boost converter circuits and various other similar applications.
The FQP16N15 offers a wide operating temperature range of -55°C~150°C, making it suitable for use in extreme temperature applications. It also features a low power dissipation, allowing it to be used in low-power applications as well. Furthermore, the FQP16N15 is relatively small in size and easy to integrate into a circuit, offering convenience and flexibility.
In summary, the FQP16N15 is a robust and reliable power MOSFET that finds great application in various DC and AC power management applications. It offers an excellent combination of electrical and physical characteristics which make it suitable for use in automotive, industrial, and communications applications. Its ability to accurately control the flow of current along with its wide operating temperature range make it suitable for a variety of applications. As a single transistor, it is relatively low in cost, small in size, and easy to integrate into a circuit, thus making it a popular choice among engineers and designers. All these factors explain why the FQP16N15 is a widely used component in a variety of power management applications.
The specific data is subject to PDF, and the above content is for reference
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