FQP12N60C

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	225W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2290pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	650 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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Introduction

The FQP12N60C is a N-channel logic level MOSFET transistor with a current rating of 50A and voltage rating of 600V. It is commonly used for Power and Battery Management, Load Switching, Inverters, and Motor Control applications. This popular MOSFET has been around for over 10 years and it offers an excellent performance/cost ratio. This article will cover the application fields and operating principles of the FQP12N60C.

Applications

The FQP12N60C MOSFET is most commonly used in power and battery management circuits. This MOSFET allows for switching high current load such as motors, relays, solenoids, and other appliances with low power loss. It is also used in linear and switching mode power supply (SMPS), battery charging, and low-power switching applications. It is suitable for driving lamps, touch screens, LCD screens, and other general-purpose switch control.Inverters are another application field of the FQP12N60C. This MOSFET can be used to switch high-current loads with low power loss in DC to AC inverter systems. It is especially suited for powering LED (Light Emitting Diodes) backlit screens, as it provides the required high switching frequency and stability.

Working Principle

The FQP12N60C is a logic level MOSFET that operates by controlling the amount of electrical current flowing through the source and drain terminals. This MOSFET works in two stages. In the first stage, a low voltage (approximately 4V) will be applied to the gate terminal, which in turn creates a small electric field that attracts electrons from the source to the drain terminals. This process is known as “ depletion”, as it removes electrons from the source to the drain.In the second stage, a higher voltage (approximately 10V) will be applied to the gate, creating a strong electric field that will attract even more electrons from the source to the drain, thus increasing the current flow to the load. This process is known as “ enhancement”, as it increases the current flow from the source to the drain.

Conclusion

The FQP12N60C is a popular N-channel logic level MOSFET transistor with a wide range of applications. It can be used in power and battery management circuits, load switching applications, inverters, and motor control. Its working principle involves the use of electric fields created by the application of low and high voltages to the gate terminal, which in turn causes electrons to be depleted or enhanced from the source to the drain.

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