FQP17N08 Allicdata Electronics
Allicdata Part #:

FQP17N08-ND

Manufacturer Part#:

FQP17N08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 16.5A TO-220
More Detail: N-Channel 80V 16.5A (Tc) 65W (Tc) Through Hole TO-...
DataSheet: FQP17N08 datasheetFQP17N08 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 65W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 115 mOhm @ 8.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQP17N08 is a single n-channel JFET developed by Fairchild Semiconductor, specifically designed for use in general purpose amplifiers and high speed switching applications. The device is housed in the TO- 92 package, which is a through-hole technology package featuring three terminals: gate, drain and source. The FQP17N08 offers a wide range of features including very low noise, high input impedance, temperature stability and low power consumption.

The FQP17N08 works on the principle of field effect transfer (FET). A FET is a semiconductor device that utilizes a conducting channel to connect two terminals, called the gate and the source, which are insulated by a semiconductor material. This relationship is referred to as the channel. By changing the voltage on the gate, a positive voltage (called biasing) or a negative voltage (called de-biasing) can be applied. This results in the alteration of current flowing through the channel. The FQP17N08 is a charge-coupled device (CCD) JFET that utilizes a depletion-mode channel.

The main application areas where the FQP17N08 can be used include switched-mode power supplies, signal processing, motor control and communication systems. In general purpose amplifier applications, it can be used as a low-noise buffer stage. In high speed switching applications, it can be used as a logic level driver for logic families such as TTL, ECL, and CMOS. The FQP17N08 can also be used as an amplifier, voltage amplifier, current source, limiter and modulator.

The FQP17N08 also offers several advantages over other JFETs. For example, it has a low input current capacitor which allows low power consumption. Moreover, the device features a low drain source saturation voltage which can reduce distortion for improved linear signal performance. Additionally, its wide input impedance allows it to be used as a signal buffering device. Lastly, its fast switching capability makes the FQP17N08 suitable for high frequency signal applications.

In conclusion, the FQP17N08 is a versatile single n-channel JFET designed for use in a variety of applications. It utilizes a depletion-mode channel and has a wide range of features including low power consumption, temperature stability, low noise and high input impedance. These features make the FQP17N08 suitable for use in general purpose amplifier stages and high speed switching applications such as switched-mode power supplies, signal processing, motor control, and communication systems.

The specific data is subject to PDF, and the above content is for reference

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