FQP15P12

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	200 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	120V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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The FQP15P12 is a single N-Channel Power MOSFET from Fairchild Semiconductor, packaged in TO-220AB surface mount package. It is ideal for a wide variety of uses, including switching, battery management and motor control applications. The device is optimized for low gate charge and low On-resistance to provide exceptional switching performance.The FQP15P12 is an N-Channel Power MOSFET, which is specially designed for excellent switching performance. It is made of silicon and its structure is the same as that of other MOSFETs. Like other MOSFETs, the FQP15P12 consists of three regions, including source, drain and gate, as well as a gate oxide and a drain oxide. The source and drain regions consist of n-type doped silicon, and the gate consists of a metal oxide layer.The source and drain regions form a p-n junction. When a voltage is applied between the source and drain, an electric field is formed between them. This electric field causes electrons from the source region to be attracted to the drain region, forming a conducting channel between the two regions. By controlling the electric field with a gate voltage, this current can be turned on or off.The drain current of the FQP15P12 depends on the gate voltage and the drain-to-source voltage. When the gate voltage is greater than a certain threshold value, the FQP15P12 is turned on, and the drain current is proportional to the drain-to-source voltage. This behavior of the MOSFET makes it suitable for various switching applications.The FQP15P12 is a kind of enhancement mode MOSFET, meaning that the gate voltage must always be higher than the source voltage in order to turn it on. This makes it suitable for switching applications, as it can be easily turned on and off by controlling the gate voltage.The FQP15P12 also has a low on-resistance, which means that it can handle high currents with low losses. This makes it ideal for power applications, such as motor control and battery management.The FQP15P12 also has a low gate charge, meaning that it can be used in high-frequency switching applications that require low switching times. Additionally, the device is available in a surface mount package, making it suitable for applications where space is limited.In summary, the FQP15P12 is a versatile N-channel enhancement mode power MOSFET, which is suitable for a wide range of applications, from switching and motor control to battery management. It has low on-resistance and gate charge, as well as a surface mount package, making it easy to use in high-frequency applications where space is limited.

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