FQP13N10L

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FQP13N10L is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) in a single package, featuring an N-Channel MOSFET. This device contains an oxide-insulated gate that is capable of controlling a large current with a relatively small gate-power voltage. As such, it is commonly used in power management applications, such as in power supplies, motor control, and various power conversion systems. The innovative design of the FQP13N10L allows it to handle higher power dissipation when compared to conventional devices. It is this combination of high current handling and low voltage that make the FQP13N10L a popular choice for power management applications.

The FQP13N10L is a depletion-mode MOSFET, which is distinguished from its corresponding enhancement-mode MOSFET counterpart by the relationship between current flow at the output and the voltage at the gate. In a depletion-mode MOSFET, the drain-current decreases when the gate-source voltage is increased. On the other hand, an enhancement-mode MOSFET has the opposite behavior, with the drain-current increasing along with the gate-source voltage. This characteristic makes the FQP13N10L suitable for usage in power supplies, where the gate-source voltage must be turned up in order to increase the drain-current. In applications like motor control, the FQP13N10L is capable of efficiently controlling the switching on and off of power to the motor.

The internal architecture of the FQP13N10L consists of two NMOS transistors connected in parallel, with one of them functioning as an inverter, and the other as a control device. The gate of the inverter is connected to the control device, and its output is connected to the drain of the control device. Data is then supplied to the gate of the control device, which then in turn controls the voltage at the source and gate of the inverter. This arrangement allows for greater reliability and power efficiency when compared to using a single NMOS transistor.

The maximum drain-source voltage for the FQP13N10L is specified as 100V, and the gate-source leakage current should not exceed 4µA. The on-state drain-source resistance is specified up to 0.38Ω, at a drain current of 8.7A and a gate-source voltage of 10V. The device has a rated working temperature of between -55 and +150 degrees Celsius.

The FQP13N10L is a highly efficient, reliable and cost-effective solution for implementing power management in a range of applications. Its dual-transistor structure provides high power handling capability and low-temperature operation, while its depletion-mode characteristics makes it suitable for applications such as motor control. The device is available in a variety of packages, making it a versatile and cost-effective solution for power management.

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