Allicdata Part #: | FQP11P06-ND |
Manufacturer Part#: |
FQP11P06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 11.4A TO-220 |
More Detail: | P-Channel 60V 11.4A (Tc) 53W (Tc) Through Hole TO-... |
DataSheet: | FQP11P06 Datasheet/PDF |
Quantity: | 744 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 53W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQP11P06 is a N-Channel MOSFET transistor with a single package. It is a high quality, low on-resistance MOSFET transistor, which has been designed and developed to provide better performance in switching, high frequency operation and low voltage operation. This device has a rating of 9.4 amperes and can be used for applications that require high power handling capability.
The FQP11P06 MOSFET transistor offers superior voltage ratings compared to the standard P-channel MOSFETs. The device features an on-resistance of 7.3 ohms and an operating voltage of up to 30 volts. The device has a low gate threshold voltage of -4.5 volts and an RDS(on) of 0.9 ohms. This makes it ideal for applications where low voltage operation is required.
The FQP11P06 is a low-power transistor and is commonly used in applications such as battery protection and power switches. It is used to switch the load current between two points, typically in rechargeable batteries, in logic applications and in solid state relays. The FQP11P06 can also be used to control the current in high frequency switching applications, such as in automotive electronics. The FQP11P06 is also very popular in power management applications.
The FQP11P06 MOSFET transistor is also used in low side switching applications. This is primarily due to its low on-resistance value. When this MOSFET is used as a switch, it allows the load voltage to be controlled with a lower current draw, thus reducing power consumption. This helps in reducing the cost of the system and increasing the life span of the device.
The FQP11P06’s working principle is simple. The gate, drain and source terminals of this device are connected to the load. When a voltage is applied to the gate terminal, a current flows between the drain and source. This switches on the FET and hence allows current to flow through the load. This device operates in the Depletion mode, meaning the current is only allowed to flow when there is an applied voltage to the gate.
The FQP11P06 transistor can also be used as an inverter, by reversing the direction of the current flow. A voltage applied at the gate terminal causes a current to flow in the opposite direction as the source-drain configuration. This helps in making the system logic compatible with the opposite polarity logic.
In conclusion, the FQP11P06 MOSFET transistor is an excellent choice for a variety of applications, such as power-handling, logic-switching, and low-side switching. Its low on-resistance values and low gate threshold voltage make it ideal for applications where low voltage and high frequency operation are required. The simple working principle of this device, combined with its excellent voltage rating and low power consumption, make it the perfect choice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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