FQP18N20V2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQP18N20V2 is a N-Channel MOSFET, which stands for metal-oxide semiconductor field-effect transistor. As a type of field-effect transistor, MOSFETs offer several advantages over other transistors and can be used in a wide range of applications. The FQP18N20V2 is a single MOSFET, meaning that it is constructed with only two terminals, and as such, has a wide variety of applications in analog and digital circuits.

MOSFETs offer several advantages over other types of transistors, including lower electrical noise, faster switching speed, and greater power efficiency. Additionally, MOSFETs are generally easier to use, since they typically require fewer components than bipolar transistors.

The FQP18N20V2 is a particularly versatile MOSFET, as it can be used in a variety of applications, including switching circuits, amplifiers, and power supplies. The FQP18N20V2 has an on-resistance of 0.18 ohms and a maximum drain-source voltage of 20V, and can handle up to 200mA of continuous drain current. This makes it suitable for a wide range of applications, from amplifiers to high-power supplies.

In addition to its versatile applications, the FQP18N20V2 is also relatively simple to use. It uses an N-type channel and operates using an enhancement-type MOSFET, which means that it does not require an active voltage source to turn on the device. Instead, a voltage is applied to the gate terminal, which, when high enough, will cause a conducting channel to be formed between the source and drain terminals. This allows the device to act as a switch, turning the device off and on depending on the voltage applied to the gate.

The FQP18N20V2 is also relatively easy to drive due to its low gate threshold voltage. This means that a lower gate voltage is required in order to turn the device on or off compared to other types of transistors. Additionally, MOSFETs also have an advantage over other transistors in terms of power dissipation, since they are optimized for low drain-to-source on-resistance.

The FQP18N20V2 is also relatively easy to operate in reverse breakdown applications, as it is equipped with a built-in diode between the drain and source terminals. Reverse breakdown applications involve applying a voltage to the drain-source terminals, which will cause the diode to conduct and create a path for the current to flow. This can be useful for low reverse current applications, such as in LED lighting.

In summary, the FQP18N20V2 is a versatile, easy-to-use, single MOSFET that can be used in a variety of applications, such as switching circuits, amplifiers, and power supplies. It has a relatively low gate threshold voltage, low on-resistance, and built-in diode which make it suited for reverse breakdown applications. As such, the FQP18N20V2 is an ideal choice for a wide range of electronic devices.

The specific data is subject to PDF, and the above content is for reference