FQP19N20CTSTU

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The FQP19N20CTSTU is a high-speed MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is designed to handle 20 Amps (withstanding up to 30 Amp surges) and has a breakdown voltage of 200V. It is a N-channel enhancement mode device that was developed by Fairchild Semiconductor and is typically used in power switching applications. The FQP19N20CTSTU is available in through-hole and space-saving Surface Mount packages.

The operation of the FQP19N20CTSTU is based on the principle of a metal oxidesemiconductor field effect transistor, which uses an electrical field to control the flow of current. The FQP19N20CTSTU is a N-Channel MOSFET, so it has three terminals; the drain, the source and the gate. A voltage applied to the gate terminal will create an electrical field, which can be used to control the flow of current from the source to the drain terminals. The FQP19N20CTSTU is a unipolar device, meaning that it only conducts current in one direction.

The FQP19N20CTSTU is mainly used in applications where high-speed switching of power is required. It is often used in switches, converters, motor control systems and motor drives. It is also frequently used in power switching circuits in applications such as audio power amplifiers and power supplies. The device is very efficient and can handle high current loads, making it a suitable choice for these types of applications.

The FQP19N20CTSTU is a robust device and is designed to operate in a wide range of temperatures, making it an ideal choice for applications that require reliable performance in demanding environments. It has a low input capacitance and fast switching speed, making it well suited for high frequency circuits. Its low on-resistance and high maximum voltage rating also make it suitable for high power requirements.

In summary, the FQP19N20CTSTU is a high-speed MOSFET designed to handle 20 Amps and a breakdown voltage of 200V. It is based on the principle of a metal oxide semiconductor field effect transistor and is most often used in applications where high-speed power switching is required. It is robust and has a wide range of operating temperature, making it an ideal choice for applications that require reliable and high performance in demanding environments. Its low on-resistance and high maximum voltage rating also make it suitable for high power requirements.

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