FQP17P10 Allicdata Electronics
Allicdata Part #:

FQP17P10-ND

Manufacturer Part#:

FQP17P10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 100V 16.5A TO-220
More Detail: P-Channel 100V 16.5A (Tc) 100W (Tc) Through Hole T...
DataSheet: FQP17P10 datasheetFQP17P10 Datasheet/PDF
Quantity: 572
Stock 572Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The FQP17P10 MOSFET is a field-effect transistor designed primarily for power switching applications. It is used as a switch that controls electric current and voltage to various electronic components.

The FQP17P10 MOSFET is a Depletion Mode N-Channel MOSFET, meaning it has two P-Channel MOSFETs in parallel. It has an extremely low on-resistance of 0.034 Ohms, making it highly efficient in power switching applications. The maximum drain-source voltage is 200V, while the maximum junction temperature is 150 degrees Celsius. This makes it suitable for higher voltage and higher temperature applications. Additionally, the FQP17P10 features exceptionally fast switching speeds, at a minimum of 0.0007 nanoseconds.

The working principle of the FQP17P10 MOSFET is that electric current passes through the transistor in the form of electrons, from the source terminal to the drain terminal. The amount of current that is allowed to flow is regulated by the gate terminal, which contains a voltage that opposes the flow of electricity. When a voltage is applied to the gate, the amount of electric current that is allowed to flow increases. When a voltage is not applied to the gate, the amount of electric current decreases.

The applications of the FQP17P10 MOSFET are wide and varied. It is commonly used in power supplies, audio amplifiers, motor drives, and any other application that requires high voltage and power switching. It is also used in many automotive applications, such as ignition systems. It can also be used in low-level signal applications, and is often used in gate circuits and logic circuits.

The FQP17P10 MOSFET is a highly efficient, fast switching, and powerful device, which makes it ideal for many applications. It can be used for low-level and high-level signal applications, power switching applications, and automotive applications. Its low on-resistance, high drain-source voltage, and fast switching makes it a great option for any application requiring a robust power switch.

The specific data is subject to PDF, and the above content is for reference

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