FQP19N10L

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	75W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	870pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 5V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	100 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	19A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQP19N10L is an N-channel enhancement mode MOSFET designed for high-speed switching applications. It has a low on-resistance and a low input capacitance which make it ideal for use in high frequency, high power circuitry. The FQP19N10L is manufactured using the latest processes and technologies and offers exceptional performance and reliability.The FQP19N10L is typically used in switching applications where low on-resistance, high switching speed and low input capacitance are required. The FQP19N10L is also suitable for use in power electronics and RF circuits.The FQP19N10L is a N-channel MOSFET with an enhancement mode. That means that the MOSFET is normally off and will only conduct when the Gate voltage is higher than the source voltage. This makes the FQP19N10L a good choice for use as a switch in circuits that need to turn on and off frequently.The FQP19N10L features a maximum drain-source voltage of 100 V, a maximum current of 16 A, and a maximum power dissipation of 70 W. The MOSFET also has a low on-resistance of 110 mOhms and a low input capacitance of 120 pF at 4.5V.The FQP19N10L is designed for high frequency applications and can handle switching frequencies up to 35 MHz. It is capable of switching voltages up to 55 V at frequencies of 1 MHz and can handle currents up to 16 A.The MOSFET is rated for a maximum operating temperature of 175°C and can be used in a variety of applications. The FQP19N10L can be used in power management, motor control, and RF applications. It is also suitable for higher frequency applications such as communications, instrumentation, and test and measurement.The FQP19N10L is an ideal choice for high frequency and high power applications that require high degrees of accuracy. The low on-resistance, low input capacitance and high switching frequency make it well suited for use in high frequency, high power circuits. The FQP19N10L is a reliable and cost effective MOSFET that offers excellent performance and reliability.

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