FQP19N10

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQP19N10 is a Field-Effect Transistor (FET) designed for use in switching and amplifier applications. It is a N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a drain to source rating of 100V and a total gate charge of 19nC. The FQP19N10 has an on-resistance of 30m Ω, making it suitable for high-current applications.

The FQP19N10 is a single MOSFET transistor, meaning that it utilizes a single semiconductor junction in its operation. This junction is formed between the source and drain terminals of the transistor, which allow the flow of electric current through them. The voltage applied between the gate and source terminals creates an electric field which modulates the current flow of the transistor, allowing or cutting off the current flow.

The FQP19N10 is extremely versatile, and it is used in a variety of applications. It can be used in amplifier circuits to amplify signals, in industrial control systems to control motors or valves, in voltage regulators and switch-mode power supplies to regulate in output voltages and currents, and in many other applications. It is also used in audio and video applications, such as amplifiers and buffers.

The FQP19N10 is relatively easy to work with. It can be installed in either a through-hole or surface-mount form factor, making it easy to integrate into a circuit board layout. It also features a simple gate-drive circuit, allowing it to be operated even by beginner circuit designers. The FQP19N10 is tough and reliable, making it suitable for use in both commercial and industrial applications.

The FQP19N10 operates at a steady and reliable level. Due to its low on-resistance (RDS) and high-current capacity, it is particularly suitable for high-power, high-current applications. Additionally, its high drain-source breakdown voltage (BVdss) of 100V guarantees adequate voltage protection when operating in high-voltage applications.

The FQP19N10 is a reliable and versatile transistor. Its low on-resistance, high drain-source breakdown voltage and current capacity make it suitable for a variety of applications such as amplifiers, motor controllers, voltage regulators and switch-mode power supplies. It is also easy to work with, thanks to its through-hole and surface-mount compatibility. Thus, the FQP19N10 is an excellent choice for a variety of design needs.

The specific data is subject to PDF, and the above content is for reference