Allicdata Part #: | FQP16N25FS-ND |
Manufacturer Part#: |
FQP16N25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 16A TO-220 |
More Detail: | N-Channel 250V 16A (Tc) 142W (Tc) Through Hole TO-... |
DataSheet: | FQP16N25 Datasheet/PDF |
Quantity: | 908 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 142W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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P-channel enhancement mode MOSFETS, also known as FQP16N25, are widely used transistors for electronic projects. These transistors work as an electronic switch, allowing a certain level of current flow to pass through them when a lower potential is applied between their source and gate terminals. Even when compared to other types of transistors, the FQP16N25 offers exceptional performance in terms of low on-resistance, high linearity, and low switching times.
The basic design of FQP16N25 consists of a thin silicon layer sandwiched between two heavily-doped silicon layers. A metal gate is placed between the two silicon layers and serves as the control element that is necessary for activation. When a positive potential is applied to the gate terminal, it attracts the negatively-charged electrons, creating a small region of inversion. This inversion area acts as a thin conducting layer that allows the flow of current from the source terminal to the drain terminal.
When designing an electronic circuit, the FQP16N25 should be chosen according to the specific current and voltage ratings required by the application. It is important to note that the maximum voltage rating for the FQP16N25 is 16V and its maximum continuous current is 25A. In addition, it has a blow-off current rating of 90A.
The FQP16N25 can be used in a variety of applications. One of the most common uses is in circuits with high speed switching. It is also used in circuits that require low-noise operation. It can also be used in power switching applications, such as the regulation of voltage levels or the conversion of AC power to DC power.
In addition to its wide range of applications, the FQP16N25 also offers several design features. It has a low threshold voltage of 6V, which helps reduce the number of components needed in the circuit. It also has a low gate-to-drain capacitance, which reduces the amount of power required to activate the switch. This helps increase the speed of the switching process.
Moreover, the FQP16N25 can be used with four external components such as a comer decoupling capacitor, a gate de-coupling capacitor, a body diode, and a gate voltage-controlled resistor. This helps improve the performance of the circuit by protecting the transistor from over-voltage or under-voltage conditions. It also improves the circuit\'s noise margin.
Overall, the FQP16N25 is an excellent choice for a variety of electronic circuits. Its low threshold voltage, low on-resistance, and high linearity make it ideal for applications such as high speed switching, noise reduction, and voltage regulation. In addition, its ease of integration and design allows for a wide range of applications. As such, the FQP16N25 is an ideal choice for many electronic projects.
The specific data is subject to PDF, and the above content is for reference
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