FQP12P10

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	75W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	290 mOhm @ 5.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11.5A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

FQP12P10 is a type of Vertical Power MOSFET (Field-Effect Transistor or FET) which is designed to be used in high voltage applications. FQP12P10 is a surface-mounted FET that is available in various channels, including N-Channel and P-Channel types. This FET is typically used in applications involving high frequency switching, such as switching of power supplies and various power conversion systems.

Application Field

The FQP12P10 is mainly used in high voltage applications, such as in AC induction motor applications or UPS systems. It is ideal for use in switching regimes, where high voltage and high switching speed are both desired. It is also suitable for use in high frequency conversion systems where reliability of input control is important. This FET can provide a low on-resistance and high power efficiency, making it an excellent choice for applications that require a high level of power efficiency.

Working Principle

The FQP12P10 is a Vertical Power MOSFET, which means that it consists of a gate, a source and a drain. The source and the drain are connected to the substrate to provide a conductive channel allowing current to flow through the FET. The gate is isolated from the source and the drain by a layer of insulation, known as the gate dielectric. When an input voltage is applied to the gate, the gate voltage causes a majority carrier to be induced in the substrate, thereby creating an effective conductive channel. This channel carries current from the source to the drain, enabling the FET to control the current. The degree of control is determined by the ratio of the gate voltage to the source voltage. The FQP12P10 is available in N-Channel and P-Channel types. The N-Channel type has an insulated gate, which is used to supply a negative voltage to the gate. This negative voltage attracts carriers to the channel, causing it to become conductive. The P-Channel type, on the other hand, has a positive gate voltage and attracts carriers to the substrate away from the channel, thereby reducing its conductivity.

Advantages

The FQP12P10 offers several advantages over other types of FETs. Firstly, it is able to achieve a very low on-resistance, allowing it to demonstrate high power efficiency. Additionally, it is a surface-mounted FET, meaning that it can fit into tight spaces to provide a secure mounting and improve mechanical robustness. The FQP12P10 is also capable of operating at high temperatures and is available in low-leakage versions for further improved power efficiency.

Conclusion

The FQP12P10 Vertical Power MOSFET is an excellent choice for applications requiring high voltage and high frequency switching performance. It is designed to be used in AC induction motor applications and in UPS systems, providing a low on-resistance and high power efficiency. This FET is available in both N-Channel and P-Channel types, with advantages including a surface-mounted design and high temperature operation capabilities.

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