FQP13N06L

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	350pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6.4nC @ 5V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	110 mOhm @ 6.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	13.6A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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FQP13N06L Application Field and Working Principle

Introduction

The FQP13N06L is a metal oxide silicon field effect transistor or MOSFET. This N-channel MOSFET is designed for use in power switching applications. It utilizes advanced feature for improving the performance of the devices including low gate drive source requirements and fast switching times. This makes the device suitable for use in high power switching applications such as computer power supplies, motor drives, audio amplifiers, and other switching applications. In this article, we will discuss the application field and working principle of the FQP13N06L.

Application Field

The FQP13N06L is suitable for controlling current in a variety of power switching applications. It is especially suitable for applications such as computer power supplies, motor drives, audio amplifiers, and other switching applications. It is also suitable for use in pulse-width modulation systems and other high frequency switched power applications. The device is capable of handling high current levels and switching frequencies up to 100kHz

The FQP13N06L is designed for use in inductive and non-inductive switching applications. It can also be used in medium current levels where the load current may range between 5a and 15a. The device is rated for drain voltages up to 60V and gate-source voltage up to 20V. The device is also capable of withstanding a maximum drain-source breakdown voltage of up to 500V and a maximum Avalanche energy of up to 50mJ.

Working Principle

The working principle of the FQP13N06L can be best described using the basic schematic of a MOSFET, which is shown in Figure 1 below.

The FQP13N06L is an N-channel MOSFET, meaning that it has an N-type semiconductor material between the source and the drain. When the gate voltage is applied, an electric field is created, which results in the creation of a conductive channel between the source and the drain. This allows current to flow through the device and therefore allows the current to be switched on or off by applying the gate voltage.The FQP13N06L has a low gate threshold voltage, which means that it requires less gate voltage to turn on the current in the device. This reduces the power requirement of the device and makes it suitable for use in power switching applications.The FQP13N06L is also a high-frequency switching device, which means that it can switch on and off rapidly and respond quickly to changes in the gate voltage. This makes the device suitable for use in pulse-width modulation systems and other high-frequency switched power applications.

Conclusion

The FQP13N06L is an N-channel MOSFET designed for use in power switching applications. It is capable of handling high current levels and switching frequencies up to 100kHz. The device is rated for drain voltages up to 60V and gate-source voltage up to 20V. It requires low gate drive source requirements and can switch on and off rapidly due to its high-frequency switching device design. The FQP13N06L is suitable for use in computer power supplies, motor drives, audio amplifiers, and other switching applications.

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