FQP17N08L

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	65W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	520pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	11.5nC @ 5V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	100 mOhm @ 8.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16.5A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQP17N08L Application Field and Working Principle

The FQP17N08L is a high-powered Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a 17A current rating and a drain-source voltage called VDSS. The FQP17N08L is part of Fairchild Semiconductor\'s commercial MOSFET family; designed for use in switching, amplifying, and level shifting applications in both digital and analog circuits.

Overview of FQP17N08L Device Characteristics

The FQP17N08L is a n-channel enhancement-mode power MOSFET. It offers low on-resistance, high-current capability, and fast switching speed. This device is available in a P-DIP (17N08L) package. When used with an appropriate gate driver, it has a current rating of 17A and a drain-source voltage rating called VDSS as high as 500V. The FQP17N08L also has a temperature range of -55°C to +150°C.The FQP17N08L has a VGS (gate-source voltage) rating of ±20V and a maximum drain current of 17A. It has an RDS(on) of 0.160 Ω and a maximum power dissipation of 18W. The device also has a high input capacitance (including gate-drain and gate-source capacitance) and gate-source input leakage current.

Applications of the FQP17N08L

The FQP17N08L is designed for use as a power switch in a variety of analog and digital circuits. It is suitable for use in applications such as air conditioners, cooler controls, washing machines, vacuum cleaners, power tools, and automotive lighting. It is also suitable for controlling inductive loads and switch mode power supplies (SMPS).

Working Principle of the FQP17N08L

The FQP17N08L is a type of MOSFET called an enhancement-mode power transistor. This type of device is constructed of two metal-oxide layers separated by a thin layer of p-type silicon. The metal-oxide layers act as the gate, while the p-type silicon forms the drain and source region.The operation of the device is based on the principle of an insulated-gate field-effect transistor (IGFET). When a voltage is applied between the gate and the source of the transistor, it creates a channel between the drain and the source. The conductance of this channel is controlled by the voltage applied between the gate and the source. This is known as the “gate voltage effect.”When a voltage is applied between the gate and the source, it deflects the electrons from the metal-oxide layers. These electrons become free electrons and travel through the channel created between the drain and the source. The current that passes through the channel is determined by the voltage applied between the gate and the source, and is known as the “drain current.”The drain current in the FQP17N08L is limited to 17A. The device also has a maximum voltage rating (drain-source voltage) known as VDSS that cannot be exceeded. If the drain-source voltage is exceeded, the device may be damaged.

Conclusion

The FQP17N08L is a high-powered MOSFET designed for use in both digital and analog circuits. It has a maximum current rating of 17A, a maximum drain-source voltage of 500V, and a maximum power dissipation of 18W. The device is suitable for use in applications such as air conditioners, cooler controls, washing machines, vacuum cleaners, power tools, and automotive lighting, as well as switch mode power supplies (SMPS). The principle of operation of the FQP17N08L is based on the concept of an insulated-gate field-effect transistor (IGFET). It has a gate-source voltage rating of ±20V and a maximum drain current of 17A, with a RDS(on) of 0.160 Ω.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description