FQP13N06

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FQP13N06 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It has a high-current, high-speed, low-on-resistance, and is specifically designed and developed for use in power conversion applications. The FQP13N06 is suitable for switching inductive loads and offers robustness, efficiency, and stability for power converters that must operate consistently even in harsh environment. This device has a single package, so it is very easy to install.

Application Field

The FQP13N06 is most commonly used in off-line switch-mode power supplies (SMPS). It finds use in the design and manufacture of Power Factor Correction (PFC) circuits, active power filters, AC-DC converters, DC-DC converters, DC-AC inverters and UPS, as well as industrial motor drives or a variety of special-purpose converters. The device is highly regarded as an all-around, reliable and efficient power semiconductor.

Working Principle

The FQP13N06 MOSFET has a drain-gate capacitance that controls the speed of switching compared to a regular MOSFET devices. This is due to the drain-gate capacitance, which is significantly higher than in regular MOSFETs. This fast switching capability makes FQP13N06 power devices ideal for high-frequency power converters, such as those used in SMPS and UPS systems. This device also has a maximum drain current of 13 A and maximum drain-source voltage of 600 V, making it ideal for use in high-power applications.

The operation of the FQP13N06 is similar to other MOSFETs. It consists of a source, drain, body, and gate terminals. When in OFF state, the voltage at the gate is kept very low, the channel between the source (S) and drain (D) is closed, and there is no current flow in the drain. When the gate is driven to a higher voltage (Vgs), the channel will open, and the transistor will be in the ON state. The voltage at the gate controls the amount of current flowing through the MOSFET. By controlling this voltage, the current in the drain can be controlled with high efficiency and accuracy.

The FQP13N06 can handle high peak currents, enabling it to operate at high switching frequencies. It has a low drain-source on-resistance (Rds) that can be adjusted to improve efficiency, reduce losses, and generate better power efficiency across a wide range of operating conditions. Furthermore, the FQP13N06 has a fast switching time with a low gate charge. This ensures that the device will operate with low power dissipation in power converters and achieve higher efficiency.

The FQP13N06 is designed to control conventional power sources, such as utility AC, solar panels and wind turbines, with an optimal combination of efficiency, robustness and accuracy. Due to its advanced technology, the device provides high performance in terms of drain current, gate charge, Rds and thermal performance. Moreover, the device is also capable of providing immunity to noise, electrostatic discharge (ESD) and transient signals.

In summary, the FQP13N06 is designed to be used in high-power applications, especially in switch-mode applications, providing performance that is both reliable and efficient. It is a versatile power semiconductor capable of handling high-frequency, high-current applications, and is suitable for most power conversion applications.

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