FQP13N50C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQP13N50C is a field-effect transistor (FET) device. It is a single, low power, N-channel device intended for use as an amplifier in many consumer applications, including audio amplifiers and portable radio applications. This device is designed to be used in consumer audio systems, providing high current gain and low operating voltage.

The FQP13N50C is constructed to provide a fast, reliable switching performance in audio systems. Its input impedance is high enough to allow for direct connection to the amplifier’s input and to eliminate external components, such as coupling capacitors. The high input impedance of the FQP13N50C also allows for the direct connection of high voltage power supplies.

The FQP13N50C features a very low quiescent current, allowing an amplifier to operate at very low voltages while still providing the necessary power. The FQP13N50C can be used to provide high power output, up to 70 A, with a low voltage of 3 V, making it suitable for low voltage, high current applications. The low power consumption of the FQP13N50C makes it an ideal choice for portable audio applications that require long battery life.

The FQP13N50C utilizes a drain-source breakdown voltage (VDS(MAX)) of 500 V and a gate-source voltage (VGS) of ±20 V in a 6-pin package. It is an N-channel device and has a drain-source on state resistance (RDS(on)) of 13 Ω at 25°C. The FQP13N50C can support high drain current of up to 70 A under low voltage and is designed for use in high-power audio applications.

The FQP13N50C is an enhancement mode (E-mode) device, which means that the gate voltage must be higher than the source voltage in order for the device to be in the ON state. The E-mode FETs are used in audio amplification because their gate-source voltage requirements can be easily met. These devices also have a low gate capacitance, which helps reduce switching time, improving audio system performance.

The FQP13N50C working principle is based on the addition of a charge to gate terminal of the FET, called gate-to-source voltage (VGS). When the gate-to-source voltage is applied to the FET, the current flow through the device increases due to an increase in the electric field between the source and the drain terminals. This effect is referred to as the “channel effect”. The increase in channel current is proportional to the gate-to-source voltage.

The FQP13N50C is designed as an ideal choice for audio systems that require high current and low voltage. The device features a low quiescent current, allowing the amplifier to operate at low voltages while still providing the necessary power. The device utilizes a low source-drain breakdown voltage and gate-source voltage, reducing the amount of power needed to maintain the device in its ON state. The FQP13N50C also features a low gate capacitance, helping to reduce switching time, thus aiding in audio system performance.

The specific data is subject to PDF, and the above content is for reference