Allicdata Part #: | FQP1N60-ND |
Manufacturer Part#: |
FQP1N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 1.2A TO-220 |
More Detail: | N-Channel 600V 1.2A (Tc) 40W (Tc) Through Hole TO-... |
DataSheet: | FQP1N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11.5 Ohm @ 600mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP1N60 is a N-channel enhancement-mode field-effect power transistor that utilizes a vertical DMOS structure. It operates efficiently as a power switch and is designed to withstand high static voltages and power levels. It is suitable for a range of applications including power supplies, light dimmers and motor control. This article will discuss the application field and working principle of the FQP1N60.
The FQP1N60 has a maximum drain current of 6A, and a typical on-state resistance of 0.49Ω. Its maximum drain-source voltage is 60V, and its maximum gate-source voltage is ±20V. This device is capable of switching high currents with a wide range of gate-source voltages, which makes it ideal for applications in storage, power supply circuits, light dimmers and motor control. It is also capable of handling high frequency switching, which makes it suitable for high speed data transfer and control applications.
The FQP1N60 operates in an enhancement mode, in which current flows through the device when the gate-source voltage is positive. The device can be used as either an amplifier or a switch, depending on the input signal. A positive gate-source voltage will cause the device to switch on, while a negative voltage will cause it to switch off. In amplifier applications, the device will amplify the input signal, while in switch applications, the device will control the current flow in the circuit. When used as a switch, the FQP1N60 can handle high currents, and its on-state resistance is low enough to minimize power dissipation and heat generation.
The FQP1N60 is equipped with an integral body diode, which is used to protect the device from reverse voltages. This diode allows current to flow in reverse, but only if the current does not exceed the device’s peak drain current. If the current exceeds this limit, the device will be damaged. This diode also helps to speed up switching times, as the stored energy in the device’s body can be released quickly when the gate-source voltage switches states.
In addition to its use as a power switch and amplifier, the FQP1N60 can also be used as a voltage regulator. Its on-state resistance, which is temperature independent, is low enough to ensure a stable output voltage in applications where the input voltage may fluctuate. It can also be used as a high power complementary pair, where it is used in conjunction with a p-channel FET. This combination is capable of providing higher current handling capabilities than a single device.
The FQP1N60 is an effective power switch for a variety of applications. It is capable of switching large currents with a wide range of gate-source voltages, and its integral body diode helps to protect the device from reverse voltages. It can also be used as an amplifier or a voltage regulator, and can be used in a complementary pair for high current applications. The FQP1N60 is an ideal choice for a range of applications including power supplies, light dimmers and motor control.
The specific data is subject to PDF, and the above content is for reference
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